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Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator
http://hdl.handle.net/10458/6811
http://hdl.handle.net/10458/6811ccde58b4-a93e-4231-9221-2d562b4ae22a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.5 MB)
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| Item type | 会議発表論文 / Conference Paper(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| 著者 |
Xiaoyuan, Ma
× Xiaoyuan, Ma× Yuji, Toshifumi× Shikama, Tomokazu× Suzaki, Yoshifumi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Homogeneous non-equilibrium cold plasma was generated stably using high voltage pulsed power (1 kV, 20 kHz) excitation of He and O2 gases under atmospheric pressure. By feeding Zn-MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO films about 190 nm thick were successfully prepared on glass substrates directly under the slit in a cathode at the substrate temperature of 400 ℃ . In this paper, we describe the effects of post-He plasma treatment on ZnO thin films. The average transmittance of the films was about 80% with wavelengths ranging from 300 nm to 700 nm. The optical band gap calculated from the absorption edge was 3.40 eV for the as-deposited film. When the treatment time was between 5 min to 60 min, the band gap of the film increased from 3.47 eV to 3.64 eV. X-ray diffraction measurement revealed that as-deposited ZnO films had a c-axis oriented poly-crystalline structure. However, post-He plasma treatment reduced the orientation of the film. By increasing the time of post-He plasma treatment, electrical resistivity decreased from 0.94 Ωcm to 6.2×10^-2 Ωcm at 60 min. FE-SEM observations show a change in the microstructure of the film. These results suggest that post-He plasma treatment changes the microstructure of the film and then electrical resistivity decreases. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : International Conference on Science, Technology & Education (ICSTE 2016) p. 81-84, 発行日 2016-09 |
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| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
