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Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator
http://hdl.handle.net/10458/6811
http://hdl.handle.net/10458/6811fda1140d-f968-4d89-8c7b-b6998ef7f480
| 名前 / ファイル | ライセンス | アクション |
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本文 (1.5 MB)
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| アイテムタイプ | 会議発表論文 / Conference Paper(1) | |||||||||||
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| 公開日 | 2020-06-21 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator | |||||||||||
| 言語 | en | |||||||||||
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| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
| 資源タイプ | conference paper | |||||||||||
| 著者 |
Xiaoyuan, Ma
× Xiaoyuan, Ma× 湯地, 敏史
WEKO
24
× Shikama, Tomokazu× 須崎, 嘉文 |
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Homogeneous non-equilibrium cold plasma was generated stably using high voltage pulsed power (1 kV, 20 kHz) excitation of He and O2 gases under atmospheric pressure. By feeding Zn-MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO films about 190 nm thick were successfully prepared on glass substrates directly under the slit in a cathode at the substrate temperature of 400 ℃ . In this paper, we describe the effects of post-He plasma treatment on ZnO thin films. The average transmittance of the films was about 80% with wavelengths ranging from 300 nm to 700 nm. The optical band gap calculated from the absorption edge was 3.40 eV for the as-deposited film. When the treatment time was between 5 min to 60 min, the band gap of the film increased from 3.47 eV to 3.64 eV. X-ray diffraction measurement revealed that as-deposited ZnO films had a c-axis oriented poly-crystalline structure. However, post-He plasma treatment reduced the orientation of the film. By increasing the time of post-He plasma treatment, electrical resistivity decreased from 0.94 Ωcm to 6.2×10^-2 Ωcm at 60 min. FE-SEM observations show a change in the microstructure of the film. These results suggest that post-He plasma treatment changes the microstructure of the film and then electrical resistivity decreases. | |||||||||||
| 言語 | en | |||||||||||
| 書誌情報 |
en : International Conference on Science, Technology & Education (ICSTE 2016) p. 81-84, 発行日 2016-09 |
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| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
