{"created":"2023-05-15T10:32:15.877383+00:00","links":{},"metadata":{"_buckets":{"deposit":"a6d206f8-2918-40d4-8381-09ea2f36e715"},"_deposit":{"id":"5978.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"5978.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00005978.1","sets":["71:35"]},"author_link":["32016","24","639","635"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"84","bibliographicPageStart":"81","bibliographic_titles":[{"bibliographic_title":"International Conference on Science, Technology & Education (ICSTE 2016)","bibliographic_titleLang":"en"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Homogeneous non-equilibrium cold plasma was generated stably using high voltage pulsed power (1 kV, 20 kHz) excitation of He and O2 gases under atmospheric pressure. By feeding Zn-MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO films about 190 nm thick were successfully prepared on glass substrates directly under the slit in a cathode at the substrate temperature of 400 ℃ . In this paper, we describe the effects of post-He plasma treatment on ZnO thin films. The average transmittance of the films was about 80% with wavelengths ranging from 300 nm to 700 nm. The optical band gap calculated from the absorption edge was 3.40 eV for the as-deposited film. When the treatment time was between 5 min to 60 min, the band gap of the film increased from 3.47 eV to 3.64 eV. X-ray diffraction measurement revealed that as-deposited ZnO films had a c-axis oriented poly-crystalline structure. However, post-He plasma treatment reduced the orientation of the film. By increasing the time of post-He plasma treatment, electrical resistivity decreased from 0.94 Ωcm to 6.2×10^-2 Ωcm at 60 min. FE-SEM observations show a change in the microstructure of the film. These results suggest that post-He plasma treatment changes the microstructure of the film and then electrical resistivity decreases.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10003_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Xiaoyuan, Ma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32016","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuji, Toshifumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"24","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"80418988","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=80418988"}]},{"creatorNames":[{"creatorName":"Shikama, Tomokazu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"639","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzaki, Yoshifumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"635","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"icste2016_p81.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/5978.1/files/icste2016_p81.pdf"},"version_id":"4607fb73-b403-449b-9e24-8cdc2b7c14a3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator","subitem_title_language":"en"}]},"item_type_id":"10003","owner":"2","path":["35"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"5978.1","relation_version_is_last":true,"title":["Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-09T23:39:57.606125+00:00"}