{"created":"2023-05-15T10:01:24.691330+00:00","id":5978,"links":{},"metadata":{"_buckets":{"deposit":"1f88dd51-96b9-4247-b49b-2f10464dc4ed"},"_deposit":{"created_by":5,"id":"5978","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"5978"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00005978","sets":["71","71:35"]},"author_link":["24","32016","24197","639"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"84","bibliographicPageStart":"81","bibliographic_titles":[{"bibliographic_title":"International Conference on Science, Technology & Education (ICSTE 2016)","bibliographic_titleLang":"en"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Homogeneous non-equilibrium cold plasma was generated stably using high voltage pulsed power (1 kV, 20 kHz) excitation of He and O2 gases under atmospheric pressure. By feeding Zn-MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO films about 190 nm thick were successfully prepared on glass substrates directly under the slit in a cathode at the substrate temperature of 400 ℃ . In this paper, we describe the effects of post-He plasma treatment on ZnO thin films. The average transmittance of the films was about 80% with wavelengths ranging from 300 nm to 700 nm. The optical band gap calculated from the absorption edge was 3.40 eV for the as-deposited film. When the treatment time was between 5 min to 60 min, the band gap of the film increased from 3.47 eV to 3.64 eV. X-ray diffraction measurement revealed that as-deposited ZnO films had a c-axis oriented poly-crystalline structure. However, post-He plasma treatment reduced the orientation of the film. By increasing the time of post-He plasma treatment, electrical resistivity decreased from 0.94 Ωcm to 6.2×10^-2 Ωcm at 60 min. FE-SEM observations show a change in the microstructure of the film. These results suggest that post-He plasma treatment changes the microstructure of the film and then electrical resistivity decreases.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10003_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Xiaoyuan, Ma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32016","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"湯地, 敏史","creatorNameLang":"ja"},{"creatorName":"ユジ, トシフミ","creatorNameLang":"ja-Kana"},{"creatorName":"Yuji, Toshifumi","creatorNameLang":"en"},{"creatorName":"Yuji, Tosifumi","creatorNameLang":"en"}],"familyNames":[{"familyName":"湯地","familyNameLang":"ja"},{"familyName":"ユジ","familyNameLang":"ja-Kana"},{"familyName":"Yuji","familyNameLang":"en"},{"familyName":"Yuji","familyNameLang":"en"}],"givenNames":[{"givenName":"敏史","givenNameLang":"ja"},{"givenName":"トシフミ","givenNameLang":"ja-Kana"},{"givenName":"Toshifumi","givenNameLang":"en"},{"givenName":"Tosifumi","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"24","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"80418988","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=80418988"}]},{"creatorNames":[{"creatorName":"Shikama, Tomokazu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"639","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"須崎, 嘉文","creatorNameLang":"ja"},{"creatorName":"スザキ, ヨシフミ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzaki, Yoshifumi","creatorNameLang":"en"}],"familyNames":[{"familyName":"須崎","familyNameLang":"ja"},{"familyName":"スザキ","familyNameLang":"ja-Kana"},{"familyName":"Suzaki","familyNameLang":"en"}],"givenNames":[{"givenName":"嘉文","givenNameLang":"ja"},{"givenName":"ヨシフミ","givenNameLang":"ja-Kana"},{"givenName":"Yoshifumi","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"24197","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"icste2016_p81.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/5978/files/icste2016_p81.pdf"},"version_id":"bbfa1256-4059-426e-84cb-3b4de1b03ba1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator","subitem_title_language":"en"}]},"item_type_id":"10003","owner":"5","path":["71","35"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"5978","relation_version_is_last":true,"title":["Effect of Post-He Plasma Treatment on ZnO Thin Film Fabrication Using an Atmospheric Pressure Cold Plasma Generator"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2024-11-15T07:34:28.043533+00:00"}