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アイテム
化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究
http://hdl.handle.net/10458/240
http://hdl.handle.net/10458/2407a304dfc-98a1-4c1c-9160-49500631a705
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00002419429.pdf (1.0 MB)
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| アイテムタイプ | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-06-28 | |||||
| タイトル | ||||||
| タイトル | 化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Investigation of Lattice Defects in Silicon Crystals Induced by Plasma Chemical Vapor Deposited Si3N4 Films | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Silicon, Silicon nitride film, TEM, Oxygen precipitation, SEM, Lattice strain | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | カガクテキ キソウ セイチョウホウ チツカマク ニ ヨル Si ケッショウチュウ ノ コウシ ケッカン ノ ケンキュウ | |||||
| 著者 |
藤澤, 通人
× 藤澤, 通人× 福森, 太一郎× 明石, 義人× 黒木, 正子× Fujisawa, Michihito× Fukumori, Taichiro× 黒木, 正子 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Abstract Dielectric silicon nitride (Si3N4) films is widely used materials for semiconductor device technology. Si3N4 films deposited by a plasma chemical vapor deposition (CVD) process are found to be under a high intrinsic tensile stress. In the present study, lattice defects such as precipitates, stacking faults and dislocations induced in the CZ-Si substrate surface with plasma CVD Si3N4 film were investigated by transmission-electron-microscope (TEM), scanning-electron microscope (SEM) and etching method. Two kinds of samples, (a) silicon substrate with plasma CVD Si3N4 film and (b) bare silicon. were prepared as specimens. These wafers were subjected to single step isothermal annealing and two-step annealing. Lattice defects were intentionally created by first step annealing at temperatures ranging from 1000℃ to 1200℃ and two-step annealing at 650℃ and 1050℃. Oxygen precipitates were observed in (a) and stacking faults were observed in (b).The effect of annealing temperature on defect formation was studied by means of preferential etching method. From diffraction contrast analysis by X-ray diffraction method, some characters of generated dislocations and line defects along the <100> direction are described. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 32, p. 39-44, 発行日 2003-07 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
