@article{oai:miyazaki-u.repo.nii.ac.jp:00002996,
 author = {藤澤, 通人 and 福森, 太一郎 and 明石, 義人 and Akashi, Yoshito and 黒木, 正子 and Kuroki, Masako and Fujisawa, Michihito and Fukumori, Taichiro and 黒木, 正子 and Kuroki, Masako},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Abstract 
Dielectric silicon nitride (Si3N4) films is widely used materials for semiconductor device 
technology. Si3N4 films deposited by a plasma chemical vapor deposition (CVD) process are found 
to be under a high intrinsic tensile stress. In the present study, lattice defects such as precipitates, 
stacking faults and dislocations induced in the CZ-Si substrate surface with plasma CVD Si3N4 
film were investigated by transmission-electron-microscope (TEM), scanning-electron microscope 
(SEM) and etching method. 
Two kinds of samples, (a) silicon substrate with plasma CVD Si3N4 film and (b) bare silicon. 
were prepared as specimens. These wafers were subjected to single step isothermal annealing and 
two-step annealing. Lattice defects were intentionally created by first step annealing at 
temperatures ranging from 1000℃ to 1200℃ and two-step annealing at 650℃ and 1050℃. 
Oxygen precipitates were observed in (a) and stacking faults were observed in (b).The effect of 
annealing temperature on defect formation was studied by means of preferential etching method. 
From diffraction contrast analysis by X-ray diffraction method, some characters of generated 
dislocations and line defects along the <100> direction are described.},
 pages = {39--44},
 title = {化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究},
 volume = {32},
 year = {2003},
 yomi = {フジサワ, ミチヒト and フクモリ, タイチロウ and アカシ, ヨシト and クロキ, マサコ and クロキ, マサコ}
}