{"created":"2023-05-15T09:58:56.035096+00:00","id":2996,"links":{},"metadata":{"_buckets":{"deposit":"b23dcc3d-5b28-4910-ad51-6990f6f7deda"},"_deposit":{"created_by":5,"id":"2996","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2996"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002996","sets":["73","73:36","73:36:330","73:36:330:313"]},"author_link":["7725","12265","15915","17794","12260","15919"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"カガクテキ キソウ セイチョウホウ チツカマク ニ ヨル Si ケッショウチュウ ノ コウシ ケッカン ノ ケンキュウ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"44","bibliographicPageStart":"39","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nDielectric silicon nitride (Si3N4) films is widely used materials for semiconductor device \ntechnology. Si3N4 films deposited by a plasma chemical vapor deposition (CVD) process are found \nto be under a high intrinsic tensile stress. In the present study, lattice defects such as precipitates, \nstacking faults and dislocations induced in the CZ-Si substrate surface with plasma CVD Si3N4 \nfilm were investigated by transmission-electron-microscope (TEM), scanning-electron microscope \n(SEM) and etching method. \nTwo kinds of samples, (a) silicon substrate with plasma CVD Si3N4 film and (b) bare silicon. \nwere prepared as specimens. These wafers were subjected to single step isothermal annealing and \ntwo-step annealing. Lattice defects were intentionally created by first step annealing at \ntemperatures ranging from 1000℃ to 1200℃ and two-step annealing at 650℃ and 1050℃. \nOxygen precipitates were observed in (a) and stacking faults were observed in (b).The effect of \nannealing temperature on defect formation was studied by means of preferential etching method. \nFrom diffraction contrast analysis by X-ray diffraction method, some characters of generated \ndislocations and line defects along the <100> direction are described.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"藤澤, 通人","creatorNameLang":"ja"},{"creatorName":"フジサワ, ミチヒト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"福森, 太一郎","creatorNameLang":"ja"},{"creatorName":"フクモリ, タイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"明石, 義人","creatorNameLang":"ja"},{"creatorName":"アカシ, ヨシト","creatorNameLang":"ja-Kana"},{"creatorName":"Akashi, Yoshito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujisawa, Michihito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumori, Taichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002419429.pdf","filesize":[{"value":"1.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002419429.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2996/files/KJ00002419429.pdf"},"version_id":"7ac812e3-0be7-4167-910a-a68169bc1fee"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Silicon, Silicon nitride film, TEM, Oxygen precipitation, SEM, Lattice strain","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究","subitem_title_language":"ja"},{"subitem_title":"Investigation of Lattice Defects in Silicon Crystals Induced by Plasma Chemical Vapor Deposited Si3N4 Films","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","313"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2996","relation_version_is_last":true,"title":["化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-10-11T05:46:15.401830+00:00"}