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微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価
http://hdl.handle.net/10458/295
http://hdl.handle.net/10458/2957eb500af-42f2-4ee2-8485-ea84e4f86225
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00002428216.pdf (2.4 MB)
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| アイテムタイプ | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-06-28 | |||||
| タイトル | ||||||
| タイトル | 微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Characterizaton of Lattice Distortions in (100) Silicon Crystals Using Grazing Incidence X-Ray Topography | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | X-ray topography, Strain, Silicon oxide film, Epitaxial film, Nitrogen ion implantation | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | ビショウカク ニュウシャ Xセン トポグラフィ ニ ヨル (100)Si ヒョウメン ノ コウシワイ ノ カンサツ ト ヒョウカ | |||||
| 著者 |
西牟田, 啓之
× 西牟田, 啓之× 福森, 太一郎× Nishimuta, Hiroyuki× Fukumori, Taichiro |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Since electric devices become easy to be influenced by local stress with improvement in the degree of accumulation of very large scale integration, the quality of the silicon surfaces on which they are made becomes more and more important. Therefore, it is important to detect minute lattice distortion near the silicon surface with sufficient accuracy. X-ray topography under the condition of simultaneous specular and Bragg reflections is effective for imaging a strain of shallow domain near the surface. In the present study, reflection X-ray topography by Berg-Barrett method using the extremely asymmetric X-ray diffraction and double-crystal arrangement of (+,+) and (+,-) parallel setting of the 311 reflection with CuKαl radiation have been applied to observation of lattice strains in near surface of silicon crystals and silicon epitaxial layer on the silicon substrate. For silicon wafers with 4.6 nm-thick oxide film, and 18 nm-thick aluminum film, local variation in the orientation of the lattice plane occurring at the boundary were observed. Lattice distortion images near the surface produced by the mechanochemical polishing and low-energy N+ ion implantation were clearly visualized. For a wafer with near (100)-oriented surface, and 18 μm thickness epitaxial film grown on <100> silicon substrate, lattice distortions of faint wrinkle-like pattern and short streaks running horizontally were also observed. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 33, p. 9-16, 発行日 2004-10 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
