{"created":"2023-05-15T09:58:53.693917+00:00","id":2951,"links":{},"metadata":{"_buckets":{"deposit":"0190b3d4-3aec-4942-925a-7e43fa18da30"},"_deposit":{"created_by":5,"id":"2951","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2951"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002951","sets":["73","73:36","73:36:330","73:36:330:314"]},"author_link":["15636","12260","15638","12265"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ビショウカク ニュウシャ Xセン トポグラフィ ニ ヨル (100)Si ヒョウメン ノ コウシワイ ノ カンサツ ト ヒョウカ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"16","bibliographicPageStart":"9","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Since electric devices become easy to be influenced by local stress with improvement\nin the degree of accumulation of very large scale integration, the quality of the silicon\nsurfaces on which they are made becomes more and more important. Therefore, it is\nimportant to detect minute lattice distortion near the silicon surface with sufficient\naccuracy. X-ray topography under the condition of simultaneous specular and Bragg\nreflections is effective for imaging a strain of shallow domain near the surface.\nIn the present study, reflection X-ray topography by Berg-Barrett method using the\nextremely asymmetric X-ray diffraction and double-crystal arrangement of (+,+) and\n(+,-) parallel setting of the 311 reflection with CuKαl radiation have been applied to\nobservation of lattice strains in near surface of silicon crystals and silicon epitaxial layer\non the silicon substrate. For silicon wafers with 4.6 nm-thick oxide film, and 18 nm-thick\naluminum film, local variation in the orientation of the lattice plane occurring at the\nboundary were observed. Lattice distortion images near the surface produced by the\nmechanochemical polishing and low-energy N+ ion implantation were clearly visualized.\nFor a wafer with near (100)-oriented surface, and 18 μm thickness epitaxial film grown\non <100> silicon substrate, lattice distortions of faint wrinkle-like pattern and short\nstreaks running horizontally were also observed.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"西牟田, 啓之","creatorNameLang":"ja"},{"creatorName":"ニシムタ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"福森, 太一郎","creatorNameLang":"ja"},{"creatorName":"フクモリ, タイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nishimuta, Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumori, Taichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002428216.pdf","filesize":[{"value":"2.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002428216.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2951/files/KJ00002428216.pdf"},"version_id":"aad7691b-f1c5-4ab2-b07c-28541d8941d6"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"X-ray topography, Strain, Silicon oxide film, Epitaxial film, Nitrogen ion implantation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価","subitem_title_language":"ja"},{"subitem_title":"Characterizaton of Lattice Distortions in (100) Silicon Crystals Using Grazing Incidence X-Ray Topography","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","314"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2951","relation_version_is_last":true,"title":["微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-07-30T05:36:11.081512+00:00"}