@article{oai:miyazaki-u.repo.nii.ac.jp:00002951,
 author = {西牟田, 啓之 and 福森, 太一郎 and Nishimuta, Hiroyuki and Fukumori, Taichiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Oct},
 note = {Since electric devices become easy to be influenced by local stress with improvement
in the degree of accumulation of very large scale integration, the quality of the silicon
surfaces on which they are made becomes more and more important. Therefore, it is
important to detect minute lattice distortion near the silicon surface with sufficient
accuracy. X-ray topography under the condition of simultaneous specular and Bragg
reflections is effective for imaging a strain of shallow domain near the surface.
In the present study, reflection X-ray topography by Berg-Barrett method using the
extremely asymmetric X-ray diffraction and double-crystal arrangement of (+,+) and
(+,-) parallel setting of the 311 reflection with CuKαl radiation have been applied to
observation of lattice strains in near surface of silicon crystals and silicon epitaxial layer
on the silicon substrate. For silicon wafers with 4.6 nm-thick oxide film, and 18 nm-thick
aluminum film, local variation in the orientation of the lattice plane occurring at the
boundary were observed. Lattice distortion images near the surface produced by the
mechanochemical polishing and low-energy N+ ion implantation were clearly visualized.
For a wafer with near (100)-oriented surface, and 18 μm thickness epitaxial film grown
on <100> silicon substrate, lattice distortions of faint wrinkle-like pattern and short
streaks running horizontally were also observed.},
 pages = {9--16},
 title = {微小角入射X線トポグラフィによる(100)Si表面の格子歪の観察と評価},
 volume = {33},
 year = {2004},
 yomi = {ニシムタ, ヒロユキ and フクモリ, タイチロウ}
}