WEKO3
-
RootNode
アイテム
STM による薄膜の形成初期過程の観察
http://hdl.handle.net/10458/1627
http://hdl.handle.net/10458/1627f0f5f9e1-4299-4536-99a5-804889c3683e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00005016023.pdf (406.6 kB)
|
|
| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2008-11-11 | |||||
| タイトル | ||||||
| タイトル | STM による薄膜の形成初期過程の観察 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Observation of Initial Stage of Thin Film Formation Process by STM | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | PLD, STM, TOF, Si(111), Atomic level, Surface, FeSi2, Si3N4 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | STM ニ ヨル ハクマク ノ ケイセイ ショキ カテイ ノ カンサツ | |||||
| 言語 | ja-Kana | |||||
| 著者 |
中村, 幸司
× 中村, 幸司× 岡崎, 裕太郎× 横谷, 篤至× 岡崎, 裕太郎 |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Techniques for fabrication of ultra thin films of good quality have become to be important for the production of very small size semiconductor and optical devices which have a comparable size as several times as an interatomic distance of general materials. In such thin and small films, the structure of the interface has a strong affection to the properties of the films. From this point of view, we think that it is very important to know the information of the interface between the substrate and the films. So we tried to observe the initial stage in which adsorption of molecules and atoms composing the film onto the substrate surface in the scale at an atomic level. We used the ultra-high vacuum STM for the observation. We used a clean Si(111)-7×7 substrate for the PLD experiment, Q-switched 2ω-YAG laser, ε-FeSi and Si3N4 target were mainly used. As a result, adsorption sites and possibilities of ablated particles from these targets were clarified. We also observed the clustering and the dissociative adsorption in FeSi2 and Si3N4 film formation process, respectively. We think that the quality of the film deposited on the single crystalline substrate by the PLD method is strongly affected by these phenomena. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 37, p. 201-206, 発行日 2008-08-30 |
|||||
| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
Share
Cite as
中村, 幸司, 岡崎, 裕太郎, 横谷, 篤至, 岡崎, 裕太郎, 2008, STM による薄膜の形成初期過程の観察: 宮崎大学工学部, 201–206 p.
Loading...
