{"created":"2023-05-15T09:58:41.389082+00:00","id":2690,"links":{},"metadata":{"_buckets":{"deposit":"226b70ea-4a07-40a9-968a-0480ec93ad2d"},"_deposit":{"created_by":5,"id":"2690","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2690"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002690","sets":["73","73:36","73:36:330","73:36:330:318"]},"author_link":["14041","12426","12038"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"STM ニ ヨル ハクマク ノ ケイセイ ショキ カテイ ノ カンサツ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"206","bibliographicPageStart":"201","bibliographicVolumeNumber":"37","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Techniques for fabrication of ultra thin films of good quality have become to be important for the production of very small size semiconductor and optical devices which have a comparable size as several times as an interatomic distance of general materials. In such thin and small films, the structure of the interface has a strong affection to the properties of the films. From this point of view, we think that it is very important to know the information of the interface between the substrate and the films. So we tried to observe the initial stage in which adsorption of molecules and atoms composing the film onto the substrate surface in the scale at an atomic level. We used the ultra-high vacuum STM for the observation. We used a clean Si(111)-7×7 substrate for the PLD experiment, Q-switched 2ω-YAG laser, ε-FeSi and Si3N4 target were mainly used. As a result, adsorption sites and possibilities of ablated particles from these targets were clarified. We also observed the clustering and the dissociative adsorption in FeSi2 and Si3N4 film formation process, respectively. We think that the quality of the film deposited on the single crystalline substrate by the PLD method is strongly affected by these phenomena.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"中村, 幸司","creatorNameLang":"ja"},{"creatorName":"ナカムラ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Nakamura, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"岡崎, 裕太郎","creatorNameLang":"ja"},{"creatorName":"オカザキ, ユウタロウ","creatorNameLang":"ja-Kana"},{"creatorName":"Okazaki, Yutaro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"岡崎, 裕太郎","creatorNameLang":"ja"},{"creatorName":"オカザキ, ユウタロウ","creatorNameLang":"ja-Kana"},{"creatorName":"Okazaki, Yutaro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00005016023.pdf","filesize":[{"value":"406.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00005016023.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2690/files/KJ00005016023.pdf"},"version_id":"dedd87bd-af44-4778-b717-9e8bf1a317d1"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"PLD, STM, TOF, Si(111), Atomic level, Surface, FeSi2, Si3N4","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"STM による薄膜の形成初期過程の観察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"STM による薄膜の形成初期過程の観察","subitem_title_language":"ja"},{"subitem_title":"Observation of Initial Stage of Thin Film Formation Process by STM","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","318"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-11-11"},"publish_date":"2008-11-11","publish_status":"0","recid":"2690","relation_version_is_last":true,"title":["STM による薄膜の形成初期過程の観察"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-27T05:37:08.537052+00:00"}