@article{oai:miyazaki-u.repo.nii.ac.jp:00002690,
 author = {中村, 幸司 and Nakamura, Koji and 岡崎, 裕太郎 and Okazaki, Yutaro and Yokotani, Atsushi and 横谷, 篤至 and 岡崎, 裕太郎 and Okazaki, Yutaro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Techniques for fabrication of ultra thin films of good quality have become to be important for the production of very small size semiconductor and optical devices which have a comparable size as several times as an interatomic distance of general materials. In such thin and small films, the structure of the interface has a strong affection to the properties of the films. From this point of view, we think that it is very important to know the information of the interface between the substrate and the films. So we tried to observe the initial stage in which adsorption of molecules and atoms composing the film onto the substrate surface in the scale at an atomic level. We used the ultra-high vacuum STM for the observation. We used a clean Si(111)-7×7 substrate for the PLD experiment, Q-switched 2ω-YAG laser, ε-FeSi and Si3N4 target were mainly used. As a result, adsorption sites and possibilities of ablated particles from these targets were clarified. We also observed the clustering and the dissociative adsorption in FeSi2 and Si3N4 film formation process, respectively. We think that the quality of the film deposited on the single crystalline substrate by the PLD method is strongly affected by these phenomena.},
 pages = {201--206},
 title = {STM による薄膜の形成初期過程の観察},
 volume = {37},
 year = {2008},
 yomi = {ナカムラ, コウジ and オカザキ, ユウタロウ and ヨコタニ, アツシ and オカザキ, ユウタロウ}
}