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真空紫外エキシマランプによる銅薄膜の室温合成に関する研究
http://hdl.handle.net/10458/252
http://hdl.handle.net/10458/252f960deb9-6983-4876-9052-6eb789ce2b35
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00002425521.pdf (471.8 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2007-06-28 | |||||
| タイトル | ||||||
| タイトル | 真空紫外エキシマランプによる銅薄膜の室温合成に関する研究 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Research on Development of Cu Thin Film at Room Temperature Using VUV Excimer Lamp | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Excimer lamp, VUV-CVD, Cu thin film, room temperature deposition, (hfac)Cu(tmvs), Cu(hfac)2 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | シンクウ シガイ エキシマ ランプ ニ ヨル ドウ ハクマク ノ シツオン ゴウセイ ニ カンスル ケンキュウ | |||||
| 言語 | ja-Kana | |||||
| 著者 |
今村, 一晴
× 今村, 一晴× 前園, 好成× 横谷, 篤至× 黒澤, 宏× Imamura, Issei× Maezono, Yoshinari× Kurosawa, Kou |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In the next generation of semiconductor devices, the width of the connection line are attempted to change from 0.25mm to less than 0.lmm. In such a narrow width, the electro-migration will arise as long as employing the line made of Al. therefore, it is necessary to employ Cu instead of Al for the material of the line, because the resistivity of Cu is smaller than that of Al. in this research, using VUV-CVD (Vacuum Ultraviolet Chemical Vapor Deposition) with four types of excimer lamps, Ar2* (λ=126nm), Xe2* (I72nm), KrCl* (222nm), and XeCl* (308nm), Cu thin film have been tried to deposit on the Si wafer at room temperature. (hfac)Cu(tmvs) and Cu(hfac)2 were used for precursors. As a result, the deposition of thin films was able to confirm with the observation of optical microscope. The content of Cu was found to be increased with pressure in the chamber by XPS analysis. The maximum Cu content of obtained films with Xe2* lamp irradiation was about 20% and 27% in the case of using (hfac)Cu(tmvs) and Cu(hfac)2, respectively. It was also found that Cu content in a molecule of the raw materials influenced Cu content of deposited films. So it was considered that the higher content of Cu in the film would be able to achieve by finding a new material, which contains fewer impurities compared to the precursor in the present work. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 32, p. 123-128, 発行日 2003-07 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
