@article{oai:miyazaki-u.repo.nii.ac.jp:00002475,
 author = {今村, 一晴 and 前園, 好成 and Yokotani, Atsushi and 横谷, 篤至 and 黒澤, 宏 and Imamura, Issei and Maezono, Yoshinari and Kurosawa, Kou},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {In the next generation of semiconductor devices, the width of the connection line are
attempted to change from 0.25mm to less than 0.lmm. In such a narrow width, the
electro-migration will arise as long as employing the line made of Al. therefore, it is necessary
to employ Cu instead of Al for the material of the line, because the resistivity of Cu is smaller
than that of Al. in this research, using VUV-CVD (Vacuum Ultraviolet Chemical Vapor
Deposition) with four types of excimer lamps, Ar2* (λ=126nm), Xe2* (I72nm), KrCl* (222nm),
and XeCl* (308nm), Cu thin film have been tried to deposit on the Si wafer at room
temperature. (hfac)Cu(tmvs) and Cu(hfac)2 were used for precursors. As a result, the deposition
of thin films was able to confirm with the observation of optical microscope. The content of Cu
was found to be increased with pressure in the chamber by XPS analysis. The maximum Cu
content of obtained films with Xe2* lamp irradiation was about 20% and 27% in the case of
using (hfac)Cu(tmvs) and Cu(hfac)2, respectively. It was also found that Cu content in a
molecule of the raw materials influenced Cu content of deposited films. So it was considered
that the higher content of Cu in the film would be able to achieve by finding a new material,
which contains fewer impurities compared to the precursor in the present work.},
 pages = {123--128},
 title = {真空紫外エキシマランプによる銅薄膜の室温合成に関する研究},
 volume = {32},
 year = {2003},
 yomi = {イマムラ, イッセイ and マエゾノ, ヨシナリ and ヨコタニ, アツシ and クロサワ, コウ}
}