{"created":"2023-05-15T09:58:30.312162+00:00","id":2475,"links":{},"metadata":{"_buckets":{"deposit":"4b08dcb9-777b-49a0-90b5-e39ec8f21fc4"},"_deposit":{"created_by":5,"id":"2475","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2475"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002475","sets":["73","73:36","73:36:330","73:36:330:313"]},"author_link":["12564","12038","12037","12041","12559","12560","12563"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"シンクウ シガイ エキシマ ランプ ニ ヨル ドウ ハクマク ノ シツオン ゴウセイ ニ カンスル ケンキュウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"128","bibliographicPageStart":"123","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In the next generation of semiconductor devices, the width of the connection line are\nattempted to change from 0.25mm to less than 0.lmm. In such a narrow width, the\nelectro-migration will arise as long as employing the line made of Al. therefore, it is necessary\nto employ Cu instead of Al for the material of the line, because the resistivity of Cu is smaller\nthan that of Al. in this research, using VUV-CVD (Vacuum Ultraviolet Chemical Vapor\nDeposition) with four types of excimer lamps, Ar2* (λ=126nm), Xe2* (I72nm), KrCl* (222nm),\nand XeCl* (308nm), Cu thin film have been tried to deposit on the Si wafer at room\ntemperature. (hfac)Cu(tmvs) and Cu(hfac)2 were used for precursors. As a result, the deposition\nof thin films was able to confirm with the observation of optical microscope. The content of Cu\nwas found to be increased with pressure in the chamber by XPS analysis. The maximum Cu\ncontent of obtained films with Xe2* lamp irradiation was about 20% and 27% in the case of\nusing (hfac)Cu(tmvs) and Cu(hfac)2, respectively. It was also found that Cu content in a\nmolecule of the raw materials influenced Cu content of deposited films. So it was considered\nthat the higher content of Cu in the film would be able to achieve by finding a new material,\nwhich contains fewer impurities compared to the precursor in the present work.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"今村, 一晴","creatorNameLang":"ja"},{"creatorName":"イマムラ, イッセイ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"前園, 好成"},{"creatorName":"マエゾノ, ヨシナリ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"黒澤, 宏","creatorNameLang":"ja"},{"creatorName":"クロサワ, コウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imamura, Issei","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maezono, Yoshinari","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kurosawa, Kou","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002425521.pdf","filesize":[{"value":"471.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002425521.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2475/files/KJ00002425521.pdf"},"version_id":"dc35e590-721f-4328-8fc3-d04a739929ad"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Excimer lamp, VUV-CVD, Cu thin film, room temperature deposition, (hfac)Cu(tmvs), Cu(hfac)2","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"真空紫外エキシマランプによる銅薄膜の室温合成に関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"真空紫外エキシマランプによる銅薄膜の室温合成に関する研究","subitem_title_language":"ja"},{"subitem_title":"Research on Development of Cu Thin Film at Room Temperature Using VUV Excimer Lamp","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","313"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2475","relation_version_is_last":true,"title":["真空紫外エキシマランプによる銅薄膜の室温合成に関する研究"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-06T06:19:47.729059+00:00"}