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PLD法による結晶性チタン酸バリウム薄膜の作製
http://hdl.handle.net/10458/251
http://hdl.handle.net/10458/251fcedacb5-e0ce-4d54-badc-4b4a20b90268
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00002425502.pdf (719.0 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-06-28 | |||||
| タイトル | ||||||
| タイトル | PLD法による結晶性チタン酸バリウム薄膜の作製 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Fabrication of Crystalline BaTiO_3 thin films by Pulsed Laser Deposition(PLD) method | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Crystalline, BaTiO3 thin film, PLD, Excimer laser, low-temperature | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | PLDホウ ニ ヨル ケッショウセイ チタンサン バリウム ハクマク ノ サクセイ | |||||
| 言語 | ja-Kana | |||||
| 著者 |
若松, 功二
× 若松, 功二× 横谷, 篤至× 黒澤, 宏× Wakamatsu, Kouzi× Kurosawa, Kou |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Abstract BaTiO3 thin films which are applicable as a capacitor material of semiconductors, such as high speed LSI, was made to deposit on Si(111) substrate by the PLD method. BaTiO3 target irradiated 18000 shots by the KrF excimer laser. The substrate temperature was varied from 20℃ to 550℃ under a vacuum of 2.0xl0(-5乗) Torr. The laser was focused with a lens of 80 mm focal length was used as a driving source of the laser ablation. The fluence of the laser on the target was approximately 5.0 J/cm(2乗). Moreover, the another ultraviolet ray irradiated the substrate by the fluence of 100 mJ/cm(2乗) simultaneousiy. As a result, the crystallized thin film was successful deposited despite 250℃.This temperature is much lower than that in the conventional methods (665℃ without the irradiation of substrate) . The crystallinity of a thin film was improved as rising the substrate temperature. The SEM observation showed that the surface of the oriented films has regular sharped structure like the sguama. It is thought that if this effect is applied to the manufacturing of LSI, in industry, it will reduce the cost of manufacturing because of the low-temperature process. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 32, p. 115-121, 発行日 2003-07 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
