@article{oai:miyazaki-u.repo.nii.ac.jp:00002464,
 author = {若松, 功二 and Yokotani, Atsushi and 横谷, 篤至 and 黒澤, 宏 and Wakamatsu, Kouzi and Kurosawa, Kou},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Abstract 
BaTiO3 thin films which are applicable as a capacitor material of semiconductors, such as 
high speed LSI, was made to deposit on Si(111) substrate by the PLD method. BaTiO3 target 
irradiated 18000 shots by the KrF excimer laser. The substrate temperature was varied from 
20℃ to 550℃ under a vacuum of 2.0xl0(-5乗) Torr. The laser was focused with a lens of 80 mm 
focal length was used as a driving source of the laser ablation. The fluence of the laser on the 
target was approximately 5.0 J/cm(2乗). Moreover, the another ultraviolet ray irradiated the 
substrate by the fluence of 100 mJ/cm(2乗) simultaneousiy. As a result, the crystallized thin film 
was successful deposited despite 250℃.This temperature is much lower than that in the 
conventional methods (665℃ without the irradiation of substrate) . The crystallinity of a thin 
film was improved as rising the substrate temperature. The SEM observation showed that the 
surface of the oriented films has regular sharped structure like the sguama. It is thought that 
if this effect is applied to the manufacturing of LSI, in industry, it will reduce the cost of 
manufacturing because of the low-temperature process.},
 pages = {115--121},
 title = {PLD法による結晶性チタン酸バリウム薄膜の作製},
 volume = {32},
 year = {2003},
 yomi = {ワカマツ, コウジ and ヨコタニ, アツシ and クロサワ, コウ}
}