{"created":"2023-05-15T09:58:29.735284+00:00","id":2464,"links":{},"metadata":{"_buckets":{"deposit":"9ecf97fd-71e9-4fcc-8af1-e11a4082c9ed"},"_deposit":{"created_by":5,"id":"2464","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2464"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002464","sets":["73","73:36","73:36:330","73:36:330:313"]},"author_link":["12482","12038","12037","12041","12479"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"PLDホウ ニ ヨル ケッショウセイ チタンサン バリウム ハクマク ノ サクセイ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"121","bibliographicPageStart":"115","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nBaTiO3 thin films which are applicable as a capacitor material of semiconductors, such as \nhigh speed LSI, was made to deposit on Si(111) substrate by the PLD method. BaTiO3 target \nirradiated 18000 shots by the KrF excimer laser. The substrate temperature was varied from \n20℃ to 550℃ under a vacuum of 2.0xl0(-5乗) Torr. The laser was focused with a lens of 80 mm \nfocal length was used as a driving source of the laser ablation. The fluence of the laser on the \ntarget was approximately 5.0 J/cm(2乗). Moreover, the another ultraviolet ray irradiated the \nsubstrate by the fluence of 100 mJ/cm(2乗) simultaneousiy. As a result, the crystallized thin film \nwas successful deposited despite 250℃.This temperature is much lower than that in the \nconventional methods (665℃ without the irradiation of substrate) . The crystallinity of a thin \nfilm was improved as rising the substrate temperature. The SEM observation showed that the \nsurface of the oriented films has regular sharped structure like the sguama. It is thought that \nif this effect is applied to the manufacturing of LSI, in industry, it will reduce the cost of \nmanufacturing because of the low-temperature process.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"若松, 功二","creatorNameLang":"ja"},{"creatorName":"ワカマツ, コウジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"黒澤, 宏"},{"creatorName":"クロサワ, コウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wakamatsu, Kouzi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kurosawa, Kou","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002425502.pdf","filesize":[{"value":"719.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002425502.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2464/files/KJ00002425502.pdf"},"version_id":"2e3c9ffa-1946-4a1d-9cf7-846d8efd827c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Crystalline, BaTiO3 thin film, PLD, Excimer laser, low-temperature","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"PLD法による結晶性チタン酸バリウム薄膜の作製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"PLD法による結晶性チタン酸バリウム薄膜の作製","subitem_title_language":"ja"},{"subitem_title":"Fabrication of Crystalline BaTiO_3 thin films by Pulsed Laser Deposition(PLD) method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","313"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2464","relation_version_is_last":true,"title":["PLD法による結晶性チタン酸バリウム薄膜の作製"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-06T06:19:47.389576+00:00"}