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物質表面における光化学反応の原子レベルでの観察と制御
http://hdl.handle.net/10458/374
http://hdl.handle.net/10458/3742fde45bb-2f2a-4f1a-b795-578d0ecf4159
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00003579365.pdf (1.3 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-06-28 | |||||
| タイトル | ||||||
| タイトル | 物質表面における光化学反応の原子レベルでの観察と制御 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Observation and control of the photochemical reaction on the material surface with a resolution of as atomic level | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | VUV-CVD, PLD, STM, TOF, Si(111), Atomic level, TEOS, TEOG, Surface, Ag, Photochemical reaction, Ablation | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | ブッシツ ヒョウメン ニ オケル コウカガク ハンノウ ノ ゲンシ レベル デノ カンサツ ト セイギョ | |||||
| 言語 | ja-Kana | |||||
| 著者 |
上村, 一秀
× 上村, 一秀× 吉田, 智司× 黒澤, 宏× 横谷, 篤至× Uemura, Kazuhide× Yoshida, Satoshi× Kurosawa, Kou× Yokotani, Atushi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have observed the surface of Si substrate at the initial stage of the photochemical reaction in VUV-CVD process and the thin film growth in PLD method with a resolution of as atomic level. We used the STM and the TOF for the observation. Si(111) sample which has a cleaned surface was used as a substrate. TEOS and TEOG were used as raw materials for forming the oxide films, and Ar2* lamp (126 nm) as a light source for photo-decomposition of these materials. When the cleaned surface was exposed with TEOS vapor, TEOS was slightly decomposed and absorbed onto the surface. The absorption was found to be extremely weak. Subsequently, irradiating the VUV-radiation, photo-decomposed molecules which consist of mainly C and H were generated from the adsorption, and desorbed from the surface. After this process, molecules consisting of mainly Si and 0 were remained on the surface. By the further irradiation, the remaining molecules were reacted with the substrate, and surface structure was changed. In the case of PLD, Ag was used as a target material, and Nd:YAG2 ω(532nm) used as a light source of ablation. Ag stuck on the surface in the form that attracted several atoms. Furthermore, structural defects were found by the collision of Ag atoms onto the surface. The stuck Ag atoms were observed in the defect on the surface. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 34, p. 103-107, 発行日 2005-08 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
