{"created":"2023-05-15T09:58:26.680961+00:00","id":2402,"links":{},"metadata":{"_buckets":{"deposit":"243282df-c737-42ed-8177-5968f4052ead"},"_deposit":{"created_by":5,"id":"2402","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2402"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002402","sets":["73","73:36","73:36:330","73:36:330:315"]},"author_link":["12042","12038","12035","12037","12041","12036","12039","12040"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ブッシツ ヒョウメン ニ オケル コウカガク ハンノウ ノ ゲンシ レベル デノ カンサツ ト セイギョ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"107","bibliographicPageStart":"103","bibliographicVolumeNumber":"34","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have observed the surface of Si substrate at the initial stage of the photochemical reaction in\nVUV-CVD process and the thin film growth in PLD method with a resolution of as atomic level. We\nused the STM and the TOF for the observation. Si(111) sample which has a cleaned surface was used\nas a substrate. TEOS and TEOG were used as raw materials for forming the oxide films, and Ar2*\nlamp (126 nm) as a light source for photo-decomposition of these materials. When the cleaned surface\nwas exposed with TEOS vapor, TEOS was slightly decomposed and absorbed onto the surface. The\nabsorption was found to be extremely weak. Subsequently, irradiating the VUV-radiation,\nphoto-decomposed molecules which consist of mainly C and H were generated from the adsorption,\nand desorbed from the surface. After this process, molecules consisting of mainly Si and 0 were\nremained on the surface. By the further irradiation, the remaining molecules were reacted with the\nsubstrate, and surface structure was changed. In the case of PLD, Ag was used as a target material,\nand Nd:YAG2 ω(532nm) used as a light source of ablation. Ag stuck on the surface in the form that\nattracted several atoms. Furthermore, structural defects were found by the collision of Ag atoms onto the surface. The stuck Ag atoms were observed in the defect on the surface.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上村, 一秀","creatorNameLang":"ja"},{"creatorName":"ウエムラ, カズヒデ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"吉田, 智司"},{"creatorName":"ヨシダ, サトシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"黒澤, 宏","creatorNameLang":"ja"},{"creatorName":"クロサワ, コウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Uemura, Kazuhide","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoshida, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kurosawa, Kou","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yokotani, Atushi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00003579365.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00003579365.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2402/files/KJ00003579365.pdf"},"version_id":"0482ce3e-649a-4459-ba01-006ac464117a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"VUV-CVD, PLD, STM, TOF, Si(111), Atomic level, TEOS, TEOG, Surface, Ag, Photochemical reaction, Ablation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"物質表面における光化学反応の原子レベルでの観察と制御","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"物質表面における光化学反応の原子レベルでの観察と制御","subitem_title_language":"ja"},{"subitem_title":"Observation and control of the photochemical reaction on the material surface with a resolution of as atomic level","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","315"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2402","relation_version_is_last":true,"title":["物質表面における光化学反応の原子レベルでの観察と制御"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-06T06:19:42.190904+00:00"}