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Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy
http://hdl.handle.net/10458/4239
http://hdl.handle.net/10458/423958521ceb-e801-499d-9037-587daf63deae
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
592ikari.pdf (434.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2012-12-18 | |||||
| タイトル | ||||||
| タイトル | Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
福山, 敦彦
× 福山, 敦彦× 碇, 哲雄× Memon, Aftab A× Sato, Syoichiro |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The piezoelectric photothermal spectroscopy （PPTS） technique was used to study the nonradiative excitation/deexcitation process in p- and n-type single crystal silicon. The effectiveness of PPTS to investigate surface states and bulk properties of single crystal silicon has been demonstrated. PPTS measurements were conducted on p- and n-type, 〈100〉 orientation, single crystal silicon samples. A broad peaked signal around 1.18±0.01 eV at room temperature showed the characteristics of slow surface states present on a silicon surface. One more signal bearing a peak around 1.07±0.005 eV was due to bulk effect. The PPTS measurements conducted at various temperatures revealed band-to-band and valence band-to-excitons states' transition with phonon assistance. The measurements at 4.2 and 110 K resolved four types of phonon participation. A good agreement between theoretical expressions and experimental data substantiates our findings that our proposed technique is useful to investigate phonon contribution in the absorption edge for rather thin semiconductor samples. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Review of Scientific Instruments 巻 74, 号 1, p. 592-594, 発行日 2003-01 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | ©2003 American Institute of Physics | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
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福山, 敦彦, 碇, 哲雄, Memon, Aftab A, Sato, Syoichiro, 2003, Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy: American Institute of Physics, 592–594 p.
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