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Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy
http://hdl.handle.net/10458/4239
http://hdl.handle.net/10458/42397aa9f964-2abe-48db-8fd7-3f80e8da4d83
| 名前 / ファイル | ライセンス | アクション |
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
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| 公開日 | 2012-12-18 | |||||||||||||||||
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| タイトル | Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy | |||||||||||||||||
| 言語 | en | |||||||||||||||||
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| 言語 | eng | |||||||||||||||||
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| 資源タイプ | journal article | |||||||||||||||||
| 著者 |
福山, 敦彦
× 福山, 敦彦
WEKO
7289
× 碇, 哲雄
WEKO
7290
× Memon, Aftab A× Sato, Syoichiro |
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| 内容記述タイプ | Abstract | |||||||||||||||||
| 内容記述 | The piezoelectric photothermal spectroscopy (PPTS) technique was used to study the nonradiative excitation/deexcitation process in p- and n-type single crystal silicon. The effectiveness of PPTS to investigate surface states and bulk properties of single crystal silicon has been demonstrated. PPTS measurements were conducted on p- and n-type, 〈100〉 orientation, single crystal silicon samples. A broad peaked signal around 1.18±0.01 eV at room temperature showed the characteristics of slow surface states present on a silicon surface. One more signal bearing a peak around 1.07±0.005 eV was due to bulk effect. The PPTS measurements conducted at various temperatures revealed band-to-band and valence band-to-excitons states' transition with phonon assistance. The measurements at 4.2 and 110 K resolved four types of phonon participation. A good agreement between theoretical expressions and experimental data substantiates our findings that our proposed technique is useful to investigate phonon contribution in the absorption edge for rather thin semiconductor samples. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 書誌情報 |
en : Review of Scientific Instruments 巻 74, 号 1, p. 592-594, 発行日 2003-01 |
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| 出版者 | American Institute of Physics | |||||||||||||||||
| 言語 | en | |||||||||||||||||
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| 言語 | en | |||||||||||||||||
| 権利情報 | ©2003 American Institute of Physics | |||||||||||||||||
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| 出版タイプ | VoR | |||||||||||||||||