{"created":"2023-05-15T10:59:21.160214+00:00","links":{},"metadata":{"_buckets":{"deposit":"0af35448-5e37-4a1d-a578-0e88352f5626"},"_deposit":{"id":"1158.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"1158.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00001158.1","sets":["73:27"]},"author_link":["7289","7290","7380","7382"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"594","bibliographicPageStart":"592","bibliographicVolumeNumber":"74","bibliographic_titles":[{"bibliographic_title":"Review of Scientific Instruments","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The piezoelectric photothermal spectroscopy （PPTS） technique was used to study the nonradiative excitation/deexcitation process in p- and n-type single crystal silicon. The effectiveness of PPTS to investigate surface states and bulk properties of single crystal silicon has been demonstrated. PPTS measurements were conducted on p- and n-type, 〈100〉 orientation, single crystal silicon samples. A broad peaked signal around 1.18±0.01 eV at room temperature showed the characteristics of slow surface states present on a silicon surface. One more signal bearing a peak around 1.07±0.005 eV was due to bulk effect. The PPTS measurements conducted at various temperatures revealed band-to-band and valence band-to-excitons states' transition with phonon assistance. The measurements at 4.2 and 110 K resolved four types of phonon participation. A good agreement between theoretical expressions and experimental data substantiates our findings that our proposed technique is useful to investigate phonon contribution in the absorption edge for rather thin semiconductor samples.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2003 American Institute of Physics","subitem_rights_language":"en"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"},{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7289","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10264368","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=10264368"}]},{"creatorNames":[{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7290","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70113214","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70113214"}]},{"creatorNames":[{"creatorName":"Memon, Aftab A","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7380","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Syoichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7382","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"592ikari.pdf","filesize":[{"value":"434.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"592ikari.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/1158.1/files/592ikari.pdf"},"version_id":"3db04f41-2783-4667-ac48-578445780202"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"2","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-12-18"},"publish_date":"2012-12-18","publish_status":"0","recid":"1158.1","relation_version_is_last":true,"title":["Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-24T05:16:07.147457+00:00"}