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原子層エピタキシーによるGaMnAs/GaAs(001)成長
http://hdl.handle.net/10458/835
http://hdl.handle.net/10458/835a6d3a01b-3a43-44cf-bcc6-a0ca9bbbdada
名前 / ファイル | ライセンス | アクション |
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KJ00004682865.pdf (488.3 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2007-10-30 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 原子層エピタキシーによるGaMnAs/GaAs(001)成長 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Atomic layer epitaxy of GaMnAs on GaAs(001) | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | self-limiting mechanism, atomic layer epitaxy (ALE), GaMnAs, MnAs | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | ゲンシソウ エピタキシー ニ ヨル GaMnAs/GaAs(001) セイチョウ | |||||
言語 | ja-Kana | |||||
著者 |
藤田, 陽
× 藤田, 陽× 尾関, 雅志× 原口, 智宏× 藤田, 陽× 原口, 智宏 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on GaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trismethylaminoarsine were used as source materials of gallium, manganese and arsenic atoms, respectively. Although the growth of GaMnAs was carried out at a high growth temperature of 500℃, a distinct self-limiting mechanism was observed for the manganese alloy composition up to 6% and the epitaxial layer had no indications of including MnAs phase. The layer showed an atomically flat surface morphology reflecting the self-limiting growth. The self-limiting mechanism was largely affected by the lattice mismatch between GaMnAs epitaxial layer and GaAs substrate. When the manganese alloy composition exceeded 7%, the self-limiting mechanism was broken and MnAs precipitates were observed in the epitaxial layer. |
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言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 36, p. 43-47, 発行日 2007-08-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |