{"created":"2023-05-15T09:58:32.330896+00:00","id":2510,"links":{},"metadata":{"_buckets":{"deposit":"21d83bbb-8f3b-42fa-a66e-f9195ed58ada"},"_deposit":{"created_by":5,"id":"2510","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2510"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002510","sets":["73","73:36","73:36:330","73:36:330:317"]},"author_link":["28621","14030","11920"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウ エピタキシー ニ ヨル GaMnAs/GaAs(001) セイチョウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"47","bibliographicPageStart":"43","bibliographicVolumeNumber":"36","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on \nGaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trismethylaminoarsine \nwere used as source materials of gallium, manganese and arsenic atoms, respectively. Although the growth of GaMnAs \nwas carried out at a high growth temperature of 500℃, a distinct self-limiting mechanism was observed for the \nmanganese alloy composition up to 6% and the epitaxial layer had no indications of including MnAs phase. The layer \nshowed an atomically flat surface morphology reflecting the self-limiting growth. The self-limiting mechanism was \nlargely affected by the lattice mismatch between GaMnAs epitaxial layer and GaAs substrate. When the manganese \nalloy composition exceeded 7%, the self-limiting mechanism was broken and MnAs precipitates were observed in the \nepitaxial layer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, Akira","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"尾関, 雅志"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, Akira","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004682865.pdf","filesize":[{"value":"488.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004682865.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2510/files/KJ00004682865.pdf"},"version_id":"307f3174-1be4-432f-a018-53dbf226a2e8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"self-limiting mechanism, atomic layer epitaxy (ALE), GaMnAs, MnAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層エピタキシーによるGaMnAs/GaAs(001)成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層エピタキシーによるGaMnAs/GaAs(001)成長","subitem_title_language":"ja"},{"subitem_title":"Atomic layer epitaxy of GaMnAs on GaAs(001)","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","317"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-10-30"},"publish_date":"2007-10-30","publish_status":"0","recid":"2510","relation_version_is_last":true,"title":["原子層エピタキシーによるGaMnAs/GaAs(001)成長"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-28T00:48:04.133956+00:00"}