@article{oai:miyazaki-u.repo.nii.ac.jp:00002510,
 author = {藤田, 陽 and Fujita, Akira and 尾関, 雅志 and Ozeki, Masashi and 原口, 智宏 and Haraguchi, Tomohiro and 藤田, 陽 and Fujita, Akira and 原口, 智宏 and Haraguchi, Tomohiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on 
GaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trismethylaminoarsine 
were used as source materials of gallium, manganese and arsenic atoms, respectively. Although the growth of GaMnAs 
was carried out at a high growth temperature of 500℃, a distinct self-limiting mechanism was observed for the 
manganese alloy composition up to 6% and the epitaxial layer had no indications of including MnAs phase. The layer 
showed an atomically flat surface morphology reflecting the self-limiting growth. The self-limiting mechanism was 
largely affected by the lattice mismatch between GaMnAs epitaxial layer and GaAs substrate. When the manganese 
alloy composition exceeded 7%, the self-limiting mechanism was broken and MnAs precipitates were observed in the 
epitaxial layer.},
 pages = {43--47},
 title = {原子層エピタキシーによるGaMnAs/GaAs(001)成長},
 volume = {36},
 year = {2007},
 yomi = {フジタ, アキラ and オゼキ, マサシ and ハラグチ, トモヒロ and フジタ, アキラ and ハラグチ, トモヒロ}
}