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歪補償InGaAs/GaAsP 超格子太陽電池のGaAsP 障壁層のP 組成変化がキャリア輸送特性に及ぼす影響評価
http://hdl.handle.net/10458/6699
http://hdl.handle.net/10458/6699c0018682-6ac3-46d1-9945-88ff2a8e3218
| 名前 / ファイル | ライセンス | アクション |
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本文 (1.2 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||||||||||
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| 公開日 | 2020-06-21 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | 歪補償InGaAs/GaAsP 超格子太陽電池のGaAsP 障壁層のP 組成変化がキャリア輸送特性に及ぼす影響評価 | |||||||||||||||||
| 言語 | ja | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Effect of Phosphorous ratio of Barrier Layer in InGaAs/GaAs Superlattice Solar Cells on Carrier Transport Properties | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| キーワード | ||||||||||||||||||
| 言語 | en | |||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | Quantum-well solar cells, Miniband formation, carrier transport property, superlattice | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | departmental bulletin paper | |||||||||||||||||
| 著者 |
岩永, 凌平
× 岩永, 凌平× 中村, 翼× 安藝, 翼× 渡部, 愛理× 杉山, 正和× 碇, 哲雄
WEKO
7290
× 福山, 敦彦
WEKO
7289
× 岩永, 凌平× 安藝, 翼× Wawanabe, Airi× 杉山, 正和 |
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| 抄録 | ||||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||||
| 内容記述 | We investigated the effect of phosphorous ratio in GaAsP barrier layer on the carrier transport properties in superlattice embedded solar cells by using the theoretical calculation and surface photovoltage (SPV) spectroscopy. Five samples were prepared by changing the phosphorus ratio from 40 to 60%, resulting in higher barrier height. Theoretical calculation using a three-dimensional device simulator showed that the energy difference between the first and second quantum levels of electrons (e1 and e2) increased by increasing the phosphorus ratio. The formed miniband width also decreased. In the SPV spectrum at room temperature, distinctive peaks were observed below the band gap of GaAs substrate. From the comparison with the theoretical calculation, lowest peak at 1.234 eV was found to be due to the electron transition from the first heavy hole to e1. When the phosphorous ratio increased, the SPV signal intensities decreased. From our previous report, electrons injected e1 can thermally excite to e2 and then tunnel through miniband. If the energy difference between e1 and e2 increased by increasing phosphorous ratio, the amount of thermally excited electron to e2 should decrease. This is the reason that the intensities of SPV decreased. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 48, p. 41-44, 発行日 2019-07 |
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| 出版者 | ||||||||||||||||||
| 出版者 | 宮崎大学工学部 | |||||||||||||||||
| 言語 | ja | |||||||||||||||||
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| 出版者 | Faculty of Engineering, University of Miyazaki | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 05404924 | |||||||||||||||||
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| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA00732558 | |||||||||||||||||
| 著者版フラグ | ||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||
