@article{oai:miyazaki-u.repo.nii.ac.jp:00005866,
 author = {岩永, 凌平 and Iwanaga, Ryohei and 中村, 翼 and Nakamura, Tsubasa and 安藝, 翼 and Aki, Tsubasa and 渡部, 愛理 and Watanabe, Airi and 杉山, 正和 and Sugiyama, Masakazu and Ikari, Tetsuo and 碇, 哲雄 and Fukuyama, Atsuhiko and 福山, 敦彦 and 岩永, 凌平 and Iwanaga, Ryohei and 安藝, 翼 and Aki, Tsubasa and Wawanabe, Airi and 杉山, 正和 and Sugiyama, Masakazu},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We investigated the effect of phosphorous ratio in GaAsP barrier layer on the carrier transport properties in superlattice embedded solar cells by using the theoretical calculation and surface photovoltage (SPV) spectroscopy. Five samples were prepared by changing the phosphorus ratio from 40 to 60%, resulting in higher barrier height. Theoretical calculation using a three-dimensional device simulator showed that the energy difference between the first and second quantum levels of electrons (e1 and e2) increased by increasing the phosphorus ratio. The formed miniband width also decreased. In the SPV spectrum at room temperature, distinctive peaks were observed below the band gap of GaAs substrate. From the comparison with the theoretical calculation, lowest peak at 1.234 eV was found to be due to the electron transition from the first heavy hole to e1. When the phosphorous ratio increased, the SPV signal intensities decreased. From our previous report, electrons injected e1 can thermally excite to e2 and then tunnel through miniband. If the energy difference between e1 and e2 increased by increasing phosphorous ratio, the amount of thermally excited electron to e2 should decrease. This is the reason that the intensities of SPV decreased.},
 pages = {41--44},
 title = {歪補償InGaAs/GaAsP 超格子太陽電池のGaAsP 障壁層のP 組成変化がキャリア輸送特性に及ぼす影響評価},
 volume = {48},
 year = {2019},
 yomi = {イワナガ, リョウヘイ and ナカムラ, ツバサ and アキ, ツバサ and ワタナベ, アイリ and スギヤマ, マサカズ and イカリ, テツオ and フクヤマ, アツヒコ and イワナガ, リョウヘイ and アキ, ツバサ and スギヤマ, マサカズ}
}