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集光照射によるSi およびGaAs 基板のHall 移動度変化と太陽電池特性への影響
http://hdl.handle.net/10458/6412
http://hdl.handle.net/10458/6412a27b0586-32a5-4d01-9364-eb25175b36e2
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (885.2 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | 集光照射によるSi およびGaAs 基板のHall 移動度変化と太陽電池特性への影響 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Effect of Concentrated Light Irradiation on Hall Mobility of Si and GaAs Substrates for solar cell application | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Hall measurement, Si, GaAs, Concentrated light irradiation, Hall Mobility | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
松田, 真輝
× 松田, 真輝× 立神, 秀弥× 髙内, 健二郎× 碇, 哲雄× 西岡, 賢祐× 福山, 敦彦× 松田, 真輝× 立神, 秀弥× 髙内, 健二郎× Nishioka, Kensuke |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We carried out the Hall measurement of Si and GaAs samples under the concentrated light irradiation to discuss the effect of large amount of carrier generation. The Hall mobility of all Si samples decreased linearly with increasing the sunlight concentration. It was also found that these decrease could prevent by using a sample with high doping concentration. From the comparison with the numerical calculation, we concluded that the reduction of Hall mobility was due to increase of the two kinds of photo-generated carriers (electron and hole). Calculation of Hall mobility as a function of impurity doping concentration demonstrated that a suitable doping concentration for Si solar cell use was considered to be 1016 cm-3 in both n- and p-type Si substrate from viewpoint of Hall mobility under 16-suns concentrated irradiation. On the other hand, the Hall mobility of n- and p-GaAs did not change even a 16-suns concentration irradiation. It can be explained that the Hall mobility was not affected by large amount of carrier generation due to its high electron mobility of GaAs. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 47, p. 77-82, 発行日 2018-07 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
