@article{oai:miyazaki-u.repo.nii.ac.jp:00005655,
 author = {松田, 真輝 and Matsuda, Naoki and 立神, 秀弥 and Tategami, Shuya and 髙内, 健二郎 and Takauchi, Kenjiro and Ikari, Tetsuo and 碇, 哲雄 and 西岡, 賢祐 and Fukuyama, Atsuhiko and 福山, 敦彦 and 松田, 真輝 and Matsuda, Naoki and 立神, 秀弥 and Tategami, Shuya and 髙内, 健二郎 and Takauchi, Kenjiro and Nishioka, Kensuke},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We carried out the Hall measurement of Si and GaAs samples under the concentrated light irradiation to discuss the effect of large amount of carrier generation. The Hall mobility of all Si samples decreased linearly with increasing the sunlight concentration. It was also found that these decrease could prevent by using a sample with high doping concentration. From the comparison with the numerical calculation, we concluded that the reduction of Hall mobility was due to increase of the two kinds of photo-generated carriers (electron and hole). Calculation of Hall mobility as a function of impurity doping concentration demonstrated that a suitable doping concentration for Si solar cell use was considered to be 1016 cm-3 in both n- and p-type Si substrate from viewpoint of Hall mobility under 16-suns concentrated irradiation. On the other hand, the Hall mobility of n- and p-GaAs did not change even a 16-suns concentration irradiation. It can be explained that the Hall mobility was not affected by large amount of carrier generation due to its high electron mobility of GaAs.},
 pages = {77--82},
 title = {集光照射によるSi およびGaAs 基板のHall 移動度変化と太陽電池特性への影響},
 volume = {47},
 year = {2018},
 yomi = {マツダ, ナオキ and タテガミ, シュウヤ and タカウチ, ケンジロウ and イカリ, テツオ and ニシオカ, ケンスケ and フクヤマ, アツヒコ and マツダ, ナオキ and タテガミ, シュウヤ and タカウチ, ケンジロウ}
}