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n-およびp-Si 基板のライフタイムと光照射時のキャリアタイプの反転による太陽電池特性への影響
http://hdl.handle.net/10458/6411
http://hdl.handle.net/10458/6411e7436b92-2bf3-4f92-bb93-58dd63356e4a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (904.2 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||||||||||||||||
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| 公開日 | 2020-06-21 | |||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||
| タイトル | n-およびp-Si 基板のライフタイムと光照射時のキャリアタイプの反転による太陽電池特性への影響 | |||||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||
| タイトル | Lifetimes of n- and p-Si substrates and effect of carrier type inversion under light irradiation on solar cell characteristics | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 言語 | ||||||||||||||||||||||||
| 言語 | jpn | |||||||||||||||||||||||
| キーワード | ||||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||||||||
| 主題 | Hall measurement, Lifetime measurement, Si wafer, Photo-generated carrier, inverted | |||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||||
| 資源タイプ | departmental bulletin paper | |||||||||||||||||||||||
| 著者 |
髙内, 健二郎
× 髙内, 健二郎× 立神, 秀弥× 松田, 真輝× 碇, 哲雄
WEKO
7290
× 西岡, 賢祐
WEKO
13733
× 福山, 敦彦
WEKO
7289
× 髙内, 健二郎× 立神, 秀弥× 松田, 真輝× Nishioka, Kensuke |
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| 抄録 | ||||||||||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||||||||||
| 内容記述 | We carried out the Hall measurements of n- and p-Si wafer under the concentrated sunlight irradiation to discuss the effect of large amount of carrier generation. The Hall mobility decreased linearly with increasing the sunlight concentration, and this decrease in mobility was caused by an increase of simultaneously-formed carriers (electron and hole). In this analysis, two additional points was found; one was that carrier type inversion was occurred only in p-Si sample even at low sunlight concentration, and the other was an amount of generated electron was 10 times larger than that of hole. This was explained by the numerical analysis by considering the difference in mobility of electron and hole when a large amount of carrier generated. To investigate the difference in the amount of generated electron and hole, we carried out the lifetime measurement of n- and p-Si wafer. We found that n-Si has extremely longer lifetime than that of p-Si. These experimental results will explain the fact that an amount of generated electron was 10 times larger than that of hole. | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 47, p. 73-76, 発行日 2018-07 |
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| 出版者 | ||||||||||||||||||||||||
| 出版者 | 宮崎大学工学部 | |||||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||||
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| 出版者 | Faculty of Engineering, University of Miyazaki | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| ISSN | ||||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||||
| 収録物識別子 | 05404924 | |||||||||||||||||||||||
| 書誌レコードID | ||||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||||
| 収録物識別子 | AA00732558 | |||||||||||||||||||||||
| 著者版フラグ | ||||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||||
