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擬似太陽光照射による単結晶Si のキャリア移動度変化と太陽電池特性への影響
http://hdl.handle.net/10458/6057
http://hdl.handle.net/10458/6057267a6fd7-c917-4e4d-8cf7-edbd6048df79
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.5 MB)
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| アイテムタイプ | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||||||||||||||||
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| 公開日 | 2020-06-21 | |||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||
| タイトル | 擬似太陽光照射による単結晶Si のキャリア移動度変化と太陽電池特性への影響 | |||||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||
| タイトル | Effect of Light Irradiation on CarrierMobility of n- and p-Type Si Substrates for Solar Cell Application | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 言語 | ||||||||||||||||||||||||
| 言語 | jpn | |||||||||||||||||||||||
| キーワード | ||||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||||||||
| 主題 | Hall measurement, Si wafer, sunlight irradiation, Mobility, Photo-generated carrier | |||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||||
| 資源タイプ | departmental bulletin paper | |||||||||||||||||||||||
| その他（別言語等）のタイトル | ||||||||||||||||||||||||
| その他のタイトル | ギジ タイヨウコウ ショウシャ ニ ヨル タンケッショウSi ノ キャリアイドウドヘンカ ト タイヨウデンチトクセイ ヘノ エイキョウ | |||||||||||||||||||||||
| 著者 |
立神, 秀弥
× 立神, 秀弥× 德田, 直樹× 高内, 健二郎× 碇, 哲雄
WEKO
7290
× 西岡, 賢祐
WEKO
13733
× 福山, 敦彦
WEKO
7289
× 立神, 秀弥× Tokuda, Naoki× 髙内, 健二郎× Nishioka, Kensuke |
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| 抄録 | ||||||||||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||||||||||
| 内容記述 | We carried out the Hall measurements of p- and n-Si wafers to investigate the dominant scattering mechanism under the concentrating sunlight irradiations. Four samples with different carrier concentration were prepared. In this study, the sample temperature was kept constant during the Hall measurements to avoid the effect of temperature-rising. Obtained Hall mobility decreased linearly with increasing the sunlight concentration up to 4.0 times for all samples. Since the ionization ratios of donor and acceptor levels did not change even at 4.0 times sunlight concentration, carriers were not subjected directly to an ionized impurity scattering. To discuss the reason of mobility decrease by the sunlight irradiation, we considered that the photo-generated electrons (Δn) and holes (Δp) affected the net carrier concentrations of n- and p-Si samples. Estimated Δn and Δp increased with increasing the sunlight concentration and Δp was found to be twice as large as Δn. We concluded that decreases of mobility by the sunlight irradiation were due to not the phonon scattering with increasing sample temperature and ionized impurity scattering by light irradiation, but the increase of both electron and hole concentration. It was also found that when the initial impurity concentration was high, the effect of sunlight irradiation on the carrier mobility was small. | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 46, p. 95-99, 発行日 2016-07-31 |
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| 出版者 | ||||||||||||||||||||||||
| 出版者 | 宮崎大学工学部 | |||||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||||
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| 出版者 | Faculty of Engineering, University of Miyazaki | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| ISSN | ||||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||||
| 収録物識別子 | 05404924 | |||||||||||||||||||||||
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| 収録物識別子タイプ | NCID | |||||||||||||||||||||||
| 収録物識別子 | AA00732558 | |||||||||||||||||||||||
| 著者版フラグ | ||||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||||
