@article{oai:miyazaki-u.repo.nii.ac.jp:00005208,
 author = {立神, 秀弥 and Tategami, Shuya and 德田, 直樹 and 高内, 健二郎 and Ikari, Tetsuo and 碇, 哲雄 and 西岡, 賢祐 and Fukuyama, Atsuhiko and 福山, 敦彦 and 立神, 秀弥 and Tategami, Shuya and Tokuda, Naoki and 髙内, 健二郎 and Takauchi, Kenjiro and Nishioka, Kensuke},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We carried out the Hall measurements of p- and n-Si wafers to investigate the dominant scattering mechanism under the concentrating sunlight irradiations. Four samples with different carrier concentration were prepared. In this study, the sample temperature was kept constant during the Hall measurements to avoid the effect of temperature-rising. Obtained Hall mobility decreased linearly with increasing the sunlight concentration up to 4.0 times for all samples. Since the ionization ratios of donor and acceptor levels did not change even at 4.0 times sunlight concentration, carriers were not subjected directly to an ionized impurity scattering. To discuss the reason of mobility decrease by the sunlight irradiation, we considered that the photo-generated electrons (Δn) and holes (Δp) affected the net carrier concentrations of n- and p-Si samples. Estimated Δn and Δp increased with increasing the sunlight concentration and Δp was found to be twice as large as Δn. We concluded that decreases of mobility by the sunlight irradiation were due to not the phonon scattering with increasing sample temperature and ionized impurity scattering by light irradiation, but the increase of both electron and hole concentration. It was also found that when the initial impurity concentration was high, the effect of sunlight irradiation on the carrier mobility was small.},
 pages = {95--99},
 title = {擬似太陽光照射による単結晶Si のキャリア移動度変化と太陽電池特性への影響},
 volume = {46},
 year = {2016},
 yomi = {タテガミ, シュウヤ and トクダ, ナオキ and タカウチ, ケンジロウ and イカリ, テツオ and ニシオカ, ケンスケ and フクヤマ, アツヒコ and タテガミ, シュウヤ and タカウチ, ケンジロウ}
}