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Zn-induced impurity levels in layer semiconductor InSe
http://hdl.handle.net/10458/5322
http://hdl.handle.net/10458/53221884a0bd-2298-41ca-90c9-25de6b21bf90
| 名前 / ファイル | ライセンス | アクション |
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本文 (372.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Zn-induced impurity levels in layer semiconductor InSe | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | Deep level transient spectroscopy, Impurity levels, II-VI semiconductors, Photoluminescence, Semiconductors | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
重冨, 茂
× 重冨, 茂× 碇, 哲雄× 中島, 寛× Ohkubo, H× 中島, 寛 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The impurity levels in Zn-doped InSe have been investigated by photoluminescence （PL）, Hall effect （HE）, and deep-level transient spectroscopy （DLTS）. Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Journal of Applied Physics. 10/15/1989, Vol. 66 Issue 8, p3647 and may be found at http://dx.doi.org/10.1063/1.344075 | |||||
| 書誌情報 |
Journal of Applied Physics 巻 66, 号 8, p. 3647-3650, 発行日 1989-10-15 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 1989 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
