@article{oai:miyazaki-u.repo.nii.ac.jp:00004474,
 author = {重冨, 茂 and Shigetomi, Shigeru and Ikari, Tetsuo and 碇, 哲雄 and 中島, 寛 and Nakashima, Hiroshi and Ohkubo, H and 中島, 寛 and Nakashima, Hiroshi},
 issue = {8},
 journal = {Journal of Applied Physics},
 month = {Oct},
 note = {The impurity levels in Zn-doped InSe have been investigated by photoluminescence （PL）, Hall effect （HE）, and deep-level transient spectroscopy （DLTS）. Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band., The following article appeared in Journal of Applied Physics. 10/15/1989, Vol. 66 Issue 8, p3647 and may be found at http://dx.doi.org/10.1063/1.344075},
 pages = {3647--3650},
 title = {Zn-induced impurity levels in layer semiconductor InSe},
 volume = {66},
 year = {1989},
 yomi = {シゲトミ, シゲル and イカリ, テツオ and ナカシマ, ヒロシ and ナカシマ, ヒロシ}
}