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Piezoelectric detection of the photoacoustic signals of n-type GaAs single crystals
http://hdl.handle.net/10458/5316
http://hdl.handle.net/10458/53165f854d22-0312-4138-a21e-d379e7539658
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-06-21 | |||||
タイトル | ||||||
タイトル | Piezoelectric detection of the photoacoustic signals of n-type GaAs single crystals | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
キーワード | Photoacoustic spectroscopy, Piezoelectricity, Defect levels, Dislocations, Electric measurements | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
著者 |
碇, 哲雄
× 碇, 哲雄× 福山, 敦彦× 横山, 宏有× 前田, 幸治× 二神, 光次× Miyazaki, K |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Piezoelectricphotoacoustic (PA) measurements on liquid-encapsulated-Czochralski-grown n-GaAs were carried out at room temperature. A continuous broad band below 1.35 eV and a peak at 1.383 eV were observed in the PA amplitude spectra. By comparing with the optical-absorption spectra, it is concluded that the broad band is due to the electron transition involving the EL2 deep-lying defect levels. For the observed peak at 1.383 eV, the origin is considered to be dislocation related. The possibility that this peak is an apparent one expected from the proposed models for the PA signal generation is denied. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The following article appeared in Journal of Applied Physics. 3/1/1992, Vol. 71 Issue 5, p2408 and may be found at http://dx.doi.org/10.1063/1.351098 | |||||
書誌情報 |
Journal of Applied Physics 巻 71, 号 5, p. 2408-2413, 発行日 1992-03-01 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
権利 | ||||||
権利情報 | Copyright 1992 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
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出版タイプ | VoR |