@article{oai:miyazaki-u.repo.nii.ac.jp:00004468,
 author = {Ikari, Tetsuo and 碇, 哲雄 and Fukuyama, Atsuhiko and 福山, 敦彦 and Yokoyama, Hirosumi and 横山, 宏有 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 二神, 光次 and Futagami, Koji and Miyazaki, K},
 issue = {5},
 journal = {Journal of Applied Physics},
 month = {Mar},
 note = {Piezoelectricphotoacoustic （PA） measurements on liquid-encapsulated-Czochralski-grown n-GaAs were carried out at room temperature. A continuous broad band below 1.35 eV and a peak at 1.383 eV were observed in the PA amplitude spectra. By comparing with the optical-absorption spectra, it is concluded that the broad band is due to the electron transition involving the EL2 deep-lying defect levels. For the observed peak at 1.383 eV, the origin is considered to be dislocation related. The possibility that this peak is an apparent one expected from the proposed models for the PA signal generation is denied., The following article appeared in Journal of Applied Physics. 3/1/1992, Vol. 71 Issue 5, p2408 and may be found at http://dx.doi.org/10.1063/1.351098},
 pages = {2408--2413},
 title = {Piezoelectric detection of the photoacoustic signals of n-type GaAs single crystals},
 volume = {71},
 year = {1992},
 yomi = {イカリ, テツオ and フクヤマ, アツヒコ and ヨコヤマ, ヒロスミ and マエダ, コウジ and フタガミ, コウジ}
}