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Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements
http://hdl.handle.net/10458/5249
http://hdl.handle.net/10458/524944842283-1bcb-483c-8b68-fbf69558baf0
| 名前 / ファイル | ライセンス | アクション |
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ikr_5249.pdf (65.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||||
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| 公開日 | 2020-06-21 | |||||||||||||||||||||||
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| タイトル | Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 言語 | ||||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||||
| キーワード | ||||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| キーワード | Piezoelectricity, Temperature measurement, Band structure, Conduction bands, Conduction electrons | |||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||||
| 著者 |
福山, 敦彦
× 福山, 敦彦
WEKO
7289
× 境, 健太郎
WEKO
12634
× 明石, 義人× 碇, 哲雄
WEKO
7290
× Memon, Aftab |
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| 内容記述タイプ | Abstract | |||||||||||||||||||||||
| 内容記述 | The temperature variation of the piezoelectric photo-thermal （PPT） signal intensity of semi-insulating （SI） GaAs from 20 to 150 K was measured. Four peaks at 50, 70, 110, and 125 K were observed in the PPT signal. From the theoretical analysis based on the rate equations of electrons in the conduction band and deep levels, we concluded that the observed four peaks were due to the nonradiative electron transitions through EL6, EL7, EL15, and an unspecified deep level, respectively. Deep levels with extremely low concentration （10^<12> –10^<15> cm^<−3> ） were clearly identified in SI GaAs by using the PPT method. | |||||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||||
| 内容記述 | The following article appeared in Journal of Applied Physics. 2/1/2001, Vol. 89 Issue 3, p1751 and may be found at http://dx.doi.org/10.1063/1.1336560 | |||||||||||||||||||||||
| 書誌情報 |
Journal of Applied Physics 巻 89, 号 3, p. 1751-1754, 発行日 2001-02-01 |
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| 出版者 | ||||||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||||||
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| 収録物識別子タイプ | ISSN | |||||||||||||||||||||||
| 収録物識別子 | 00218979 | |||||||||||||||||||||||
| 権利 | ||||||||||||||||||||||||
| 権利情報 | Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||||||||||||||||||||
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| 出版タイプ | VoR | |||||||||||||||||||||||
