{"created":"2023-05-15T10:00:05.732102+00:00","id":4401,"links":{},"metadata":{"_buckets":{"deposit":"eaaae2fe-3daf-42d0-bf14-0397dadb92d5"},"_deposit":{"created_by":5,"id":"4401","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"4401"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00004401","sets":["73","73:27"]},"author_link":["23301","12634","7289","7725","7290"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-02-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"1754","bibliographicPageStart":"1751","bibliographicVolumeNumber":"89","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The temperature variation of the piezoelectric photo-thermal （PPT） signal intensity of semi-insulating （SI） GaAs from 20 to 150 K was measured. Four peaks at 50, 70, 110, and 125 K were observed in the PPT signal. From the theoretical analysis based on the rate equations of electrons in the conduction band and deep levels, we concluded that the observed four peaks were due to the nonradiative electron transitions through EL6, EL7, EL15, and an unspecified deep level, respectively. Deep levels with extremely low concentration （10^<12> –10^<15>  cm^<−3> ） were clearly identified in SI GaAs by using the PPT method.","subitem_description_type":"Abstract"}]},"item_10001_description_6":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The following article appeared in Journal of Applied Physics. 2/1/2001, Vol. 89 Issue 3, p1751 and may be found at http://dx.doi.org/10.1063/1.1336560","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"},{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"境, 健太郎"},{"creatorName":"サカイ, ケンタロウ","creatorNameLang":"ja-Kana"},{"creatorName":"Sakai, Kentaro","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"明石, 義人"},{"creatorName":"アカシ, ヨシト","creatorNameLang":"ja-Kana"},{"creatorName":"Akashi, Yoshito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Memon, Aftab","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"ikr_5249.pdf","filesize":[{"value":"65.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ikr_5249.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/4401/files/ikr_5249.pdf"},"version_id":"bfcd1ae4-0e52-4031-8f66-b7a56698c040"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Piezoelectricity, Temperature measurement, Band structure, Conduction bands, Conduction electrons","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"5","path":["73","27"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"4401","relation_version_is_last":true,"title":["Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-02T13:32:04.130546+00:00"}