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Structural, Optical and Electronic Properties of Hydrogenated SiC Films Prepared by Magnetron Sputtering Method
http://hdl.handle.net/10458/4968
http://hdl.handle.net/10458/4968fdcf4d33-3471-49bc-abe1-d6bb73343412
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
engineering43_1-16.pdf (1.1 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2014-09-03 | |||||
| タイトル | ||||||
| タイトル | Structural, Optical and Electronic Properties of Hydrogenated SiC Films Prepared by Magnetron Sputtering Method | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | SiC, Film, Sputtering, Amorphous, Micro crystal, Superlatice | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
齋藤, 順雄
× 齋藤, 順雄× 齋藤, 順雄 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Physical properties of semiconductors are much more changed by disorder than metals or insulators, and are the most interesting field for fundamental research. The author has studied on several kinds of disordered semiconductor films. One of the author's contributable materials to this field is hydrogenated amorphous SiC (a-SiC:H) prepared by magnetron sputtering (MSP) of silicon in methane-argon gas mixtures. In this article, the author describes the methods of film deposition, physical properties, their merits, limitations and achievements. The first chapter deals with the fundamental properties of a-SiC:H deposited using methane gas which is considered essential for any deeper understanding of the nature of the films. The second chapter is the effects of sputtering conditions on the film properties. The third chapter deals with doping effects deposited by co-sputtering or reactive-one. The fourth chapter is the formation of partly micro crystallized films which are considered difficult to shift from the amorphous state. The last chapter deals with the formation of the superlatice structure composed of a-SiC:H and a-GeC:H multilayers. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 43, p. 1-16, 発行日 2014-07-31 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
