{"created":"2023-05-15T09:58:39.750103+00:00","id":2654,"links":{},"metadata":{"_buckets":{"deposit":"d7d5fe08-0aa5-4d54-9b53-eae23bc12950"},"_deposit":{"created_by":5,"id":"2654","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2654"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002654","sets":["73","73:36","73:36:330","73:36:330:324"]},"author_link":["15288"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-07-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"16","bibliographicPageStart":"1","bibliographicVolumeNumber":"43","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Physical properties of semiconductors are much more changed by disorder than metals or insulators, and are the most interesting field for fundamental research. The author has studied on several kinds of disordered semiconductor films. One of the author's contributable materials to this field is hydrogenated amorphous SiC (a-SiC:H) prepared by magnetron sputtering (MSP) of silicon in methane-argon gas mixtures. In this article, the author describes the methods of film deposition, physical properties, their merits, limitations and achievements.\nThe first chapter deals with the fundamental properties of a-SiC:H deposited using methane gas which is considered essential for any deeper understanding of the nature of the films. The second chapter is the effects of sputtering conditions on the film properties. The third chapter deals with doping effects deposited by co-sputtering or reactive-one. The fourth chapter is the formation of partly micro crystallized films which are considered difficult to shift from the amorphous state. The last chapter deals with the formation of the superlatice structure composed of a-SiC:H and a-GeC:H multilayers.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"齋藤, 順雄","creatorNameLang":"ja"},{"creatorName":"サイトウ, ノブオ","creatorNameLang":"ja-Kana"},{"creatorName":"Saito, Nobuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"齋藤","familyNameLang":"ja"},{"familyName":"サイトウ","familyNameLang":"ja-Kana"},{"familyName":"Saito","familyNameLang":"en"}],"givenNames":[{"givenName":"順雄","givenNameLang":"ja"},{"givenName":"ノブオ","givenNameLang":"ja-Kana"},{"givenName":"Nobuo","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"15288","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"齋藤, 順雄","creatorNameLang":"ja"},{"creatorName":"サイトウ, ノブオ","creatorNameLang":"ja-Kana"},{"creatorName":"Saito, Nobuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"齋藤","familyNameLang":"ja"},{"familyName":"サイトウ","familyNameLang":"ja-Kana"},{"familyName":"Saito","familyNameLang":"en"}],"givenNames":[{"givenName":"順雄","givenNameLang":"ja"},{"givenName":"ノブオ","givenNameLang":"ja-Kana"},{"givenName":"Nobuo","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"15288","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering43_1-16.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering43_1-16.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2654/files/engineering43_1-16.pdf"},"version_id":"d2f4ca5f-a5b7-41d0-bcd5-45086f0c3714"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC, Film, Sputtering, Amorphous, Micro crystal, Superlatice","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Structural, Optical and Electronic Properties of Hydrogenated SiC Films Prepared by Magnetron Sputtering Method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Structural, Optical and Electronic Properties of Hydrogenated SiC Films Prepared by Magnetron Sputtering Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","324"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2014-09-03"},"publish_date":"2014-09-03","publish_status":"0","recid":"2654","relation_version_is_last":true,"title":["Structural, Optical and Electronic Properties of Hydrogenated SiC Films Prepared by Magnetron Sputtering Method"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-21T02:26:35.411980+00:00"}