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Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy
http://hdl.handle.net/10458/0002000884
http://hdl.handle.net/10458/0002000884ab252703-340f-45d6-ac57-7485828615f2
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||
|---|---|---|---|---|---|---|---|---|
| 公開日 | 2025-01-01 | |||||||
| タイトル | ||||||||
| タイトル | Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy | |||||||
| 言語 | en | |||||||
| 言語 | ||||||||
| 言語 | eng | |||||||
| キーワード | ||||||||
| 言語 | en | |||||||
| 主題Scheme | Other | |||||||
| キーワード | A3. Atomic layer epitaxy | |||||||
| キーワード | ||||||||
| 言語 | en | |||||||
| 主題Scheme | Other | |||||||
| キーワード | A1. X-ray diffraction | |||||||
| キーワード | ||||||||
| 言語 | en | |||||||
| 主題Scheme | Other | |||||||
| キーワード | A1. Post annealing | |||||||
| キーワード | ||||||||
| 言語 | en | |||||||
| 主題Scheme | Other | |||||||
| キーワード | A1. Defects | |||||||
| キーワード | ||||||||
| 言語 | en | |||||||
| 主題Scheme | Other | |||||||
| キーワード | A1. Diffusion | |||||||
| キーワード | ||||||||
| 言語 | en | |||||||
| 主題Scheme | Other | |||||||
| キーワード | A1. Carrier mobility | |||||||
| 資源タイプ | ||||||||
| 資源タイプ | journal article | |||||||
| アクセス権 | ||||||||
| 著者 |
Kawano Masahiro
× Kawano Masahiro
× 原口, 智宏× 鈴木, 秀俊 |
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| 抄録 | ||||||||
| 内容記述タイプ | Abstract | |||||||
| 内容記述 | The effects of nitrogen (N) distribution on the electrical properties of GaAsN films were evaluated by intentionally changing the N distribution using atomic layer epitaxy (ALE) and post-annealing. The N distribution was controlled in the growth direction by growing superlattice (SL) thin films repeatedly growing 1 GaAsN layer and 0, 3, and 5 layers of GaAs by ALE. These films were referred to as (1:0), (1:3), and (1:5), respectively. To change the N distribution in the same thin film, N atoms were diffused by post-annealing. Changes in N distribution were evaluated by X-ray diffraction as changes in GaAsN superstructure. N atoms diffused from GaAsN layers to the adjacent layers in (1:3) films annealed above 750 °C, while they remained stable in those of (1:5) films annealed at temperatures up to 850 °C. The carrier mobility of both films increased monotonically with the annealing temperature. The concentration of ionized scattering centers decreased significantly in films annealed at 650 °C (independent of their N distributions) owing to the elimination of donor-type defects by annealing. Contrarily, the concentrations of N-induced scattering centers in (1:5) films annealed below 900 °C were similar, while those in (1:3) films annealed above 750 °C decreased significantly, in agreement with the N-atom diffusion behavior of GaAsN layers. Thus, N-distribution homogenization can be related to the reduction of N-induced scattering centers. | |||||||
| 言語 | en | |||||||
| 書誌情報 |
en : Journal of Crystal Growth 巻 649, p. 127915, 発行日 2025 |
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| 出版者 | ||||||||
| 出版者 | Elsevier | |||||||
| 言語 | en | |||||||
| ISSN | ||||||||
| 収録物識別子タイプ | ISSN | |||||||
| 収録物識別子 | 00220248 | |||||||
| 書誌レコードID | ||||||||
| 識別子タイプ | DOI | |||||||
| 関連識別子 | 10.1016/j.jcrysgro.2024.127915 | |||||||
| DOI | ||||||||
| 関連タイプ | isVersionOf | |||||||
| 識別子タイプ | DOI | |||||||
| 関連識別子 | https://doi.org/10.1016/j.jcrysgro.2024.127915 | |||||||
| 権利 | ||||||||
| 言語 | en | |||||||
| 権利情報 | © 2024 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies. | |||||||
| 著者版フラグ | ||||||||
| 出版タイプ | NA | |||||||
