{"created":"2025-01-08T06:45:29.231455+00:00","id":2000884,"links":{},"metadata":{"_buckets":{"deposit":"5b4d4123-82b5-42d6-a32d-0ff7712fcebf"},"_deposit":{"created_by":11,"id":"2000884","owner":"11","owners":[11],"pid":{"revision_id":0,"type":"depid","value":"2000884"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:02000884","sets":["73","73:27"]},"author_link":["28621","14196"],"control_number":"2000884","item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2025","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"127915","bibliographicVolumeNumber":"649","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effects of nitrogen (N) distribution on the electrical properties of GaAsN films were evaluated by intentionally changing the N distribution using atomic layer epitaxy (ALE) and post-annealing. The N distribution was controlled in the growth direction by growing superlattice (SL) thin films repeatedly growing 1 GaAsN layer and 0, 3, and 5 layers of GaAs by ALE. These films were referred to as (1:0), (1:3), and (1:5), respectively. To change the N distribution in the same thin film, N atoms were diffused by post-annealing. Changes in N distribution were evaluated by X-ray diffraction as changes in GaAsN superstructure. N atoms diffused from GaAsN layers to the adjacent layers in (1:3) films annealed above 750 °C, while they remained stable in those of (1:5) films annealed at temperatures up to 850 °C. The carrier mobility of both films increased monotonically with the annealing temperature. The concentration of ionized scattering centers decreased significantly in films annealed at 650 °C (independent of their N distributions) owing to the elimination of donor-type defects by annealing. Contrarily, the concentrations of N-induced scattering centers in (1:5) films annealed below 900 °C were similar, while those in (1:3) films annealed above 750 °C decreased significantly, in agreement with the N-atom diffusion behavior of GaAsN layers. Thus, N-distribution homogenization can be related to the reduction of N-induced scattering centers.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_10001_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jcrysgro.2024.127915","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jcrysgro.2024.127915","subitem_relation_type_select":"DOI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2024 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","subitem_rights_language":"en"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00220248","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_be7fb7dd8ff6fe43","subitem_version_type":"NA"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kawano Masahiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{"familyName":"原口","familyNameLang":"ja"},{"familyName":"ハラグチ","familyNameLang":"ja-Kana"},{"familyName":"Haraguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"智宏","givenNameLang":"ja"},{"givenName":"トモヒロ","givenNameLang":"ja-Kana"},{"givenName":"Tomohiro","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"28621","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"鈴木, 秀俊","creatorNameLang":"ja"},{"creatorName":"スズキ, ヒデトシ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzuki, Hidetoshi","creatorNameLang":"en"}],"familyNames":[{"familyName":"鈴木","familyNameLang":"ja"},{"familyName":"スズキ","familyNameLang":"ja-Kana"},{"familyName":"Suzuki","familyNameLang":"en"}],"givenNames":[{"givenName":"秀俊","givenNameLang":"ja"},{"givenName":"ヒデトシ","givenNameLang":"ja-Kana"},{"givenName":"Hidetoshi","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14196","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"00387854","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=00387854"}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"A3. Atomic layer epitaxy","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"A1. X-ray diffraction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"A1. Post annealing","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"A1. Defects","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"A1. Diffusion","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"A1. Carrier mobility","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"11","path":["73","27"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2025-01-01"},"publish_date":"2025-01-01","publish_status":"0","recid":"2000884","relation_version_is_last":true,"title":["Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy"],"weko_creator_id":"11","weko_shared_id":-1},"updated":"2025-01-21T07:12:30.923985+00:00"}