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Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal and Surface Photovoltage Signals
http://hdl.handle.net/10458/5410
http://hdl.handle.net/10458/54102c2c96d4-8297-4b78-82a7-b09c05b566e6
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal and Surface Photovoltage Signals | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| 著者 |
佐藤, 庄一郎
× 佐藤, 庄一郎× 福嶋, 晋一× 田中, 秀司× 境, 健太郎× 福山, 敦彦× 碇, 哲雄× Sato, Shoichiro× 福嶋, 晋一× Tanaka, Shuji |
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| 書誌情報 |
Semiconductor Device Research Symposium, 2005 International p. 410-411, 発行日 2005-12 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
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佐藤, 庄一郎, 福嶋, 晋一, 田中, 秀司, 境, 健太郎, 福山, 敦彦, 碇, 哲雄, Sato, Shoichiro, 福嶋, 晋一, Tanaka, Shuji, 2005, Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal and Surface Photovoltage Signals: IEEE, 410–411 p.
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