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Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction
http://hdl.handle.net/10458/5255
http://hdl.handle.net/10458/5255e13cd2be-658d-48f1-865f-13ff0ecb6651
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (331.4 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | Heterojunctions, Electrical properties, Electric currents, Illumination, Solar energy | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
重冨, 茂
× 重冨, 茂× 碇, 哲雄 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | GaSe（Cu）/InSe heterojunctions have been formed by bringing the cleavage surface of undoped n-InSe and Cu-doped p-GaSe into direct contact. Transport and phototransport properties are studied by the measurements of capacitance–voltage, current–voltage, and the spectral response of short-circuit current. Moreover, the efficiency parameters under illumination are estimated by using the open-circuit voltage and short-circuit current. These characteristics of GaSe（Cu）/InSe heterojunctions are compared with those of GaSe（Un）/InSe heterojunctions fabricated by undoped p-GaSe and n-InSe. The series resistance of GaSe（Cu）/InSe heterojunctions is found, the value of which is about 10^3 times lower than the corresponding value of GaSe（Un）/InSe heterojunctions. A short-circuit current density of 9.0 mA/cm^2 and an open-circuit voltage of 0.42 V on GaSe（Cu）/InSe heterojunctions are obtained under illumination of 120 mW/cm^2 of a halogen lamp. The short-circuit current of GaSe（Cu）/InSe heterojunctions is about one order of magnitude lager than that of GaSe（Un）/InSe heterojunctions. These experimental results indicate that the low-resistivity of Cu-doped GaSe is effective for the electrical and photovoltaicproperties of GaSe/InSe heterojunctions. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Journal of Applied Physics. 8/1/2000, Vol. 88 Issue 3, p1520 and may be found at http://dx.doi.org/10.1063/1.373849 | |||||
| 書誌情報 |
Journal of Applied Physics 巻 88, 号 3, p. 1520-1524, 発行日 2000-08-01 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
