@article{oai:miyazaki-u.repo.nii.ac.jp:00004407,
 author = {重冨, 茂 and Shigetomi, Shigeru and Ikari, Tetsuo and 碇, 哲雄},
 issue = {3},
 journal = {Journal of Applied Physics},
 month = {Aug},
 note = {GaSe（Cu）/InSe heterojunctions have been formed by bringing the cleavage surface of undoped n-InSe and Cu-doped p-GaSe into direct contact. Transport and phototransport properties are studied by the measurements of capacitance–voltage, current–voltage, and the spectral response of short-circuit current. Moreover, the efficiency parameters under illumination are estimated by using the open-circuit voltage and short-circuit current. These characteristics of GaSe（Cu）/InSe heterojunctions are compared with those of GaSe（Un）/InSe heterojunctions fabricated by undoped p-GaSe and n-InSe. The series resistance of GaSe（Cu）/InSe heterojunctions is found, the value of which is about 10^3 times lower than the corresponding value of GaSe（Un）/InSe heterojunctions. A short-circuit current density of 9.0 mA/cm^2 and an open-circuit voltage of 0.42 V on GaSe（Cu）/InSe heterojunctions are obtained under illumination of 120 mW/cm^2 of a halogen lamp. The short-circuit current of GaSe（Cu）/InSe heterojunctions is about one order of magnitude lager than that of GaSe（Un）/InSe heterojunctions. These experimental results indicate that the low-resistivity of Cu-doped GaSe is effective for the electrical and photovoltaicproperties of GaSe/InSe heterojunctions., The following article appeared in Journal of Applied Physics. 8/1/2000, Vol. 88 Issue 3, p1520 and may be found at http://dx.doi.org/10.1063/1.373849},
 pages = {1520--1524},
 title = {Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction},
 volume = {88},
 year = {2000},
 yomi = {シゲトミ, シゲル and イカリ, テツオ}
}