{"created":"2023-05-15T10:00:05.995671+00:00","id":4407,"links":{},"metadata":{"_buckets":{"deposit":"9bbee045-96c2-47c2-a4ca-ebd203863419"},"_deposit":{"created_by":5,"id":"4407","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"4407"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00004407","sets":["73","73:27"]},"author_link":["7290","22274"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-08-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"1524","bibliographicPageStart":"1520","bibliographicVolumeNumber":"88","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"GaSe（Cu）/InSe heterojunctions have been formed by bringing the cleavage surface of undoped n-InSe and Cu-doped p-GaSe into direct contact. Transport and phototransport properties are studied by the measurements of capacitance–voltage, current–voltage, and the spectral response of short-circuit current. Moreover, the efficiency parameters under illumination are estimated by using the open-circuit voltage and short-circuit current. These characteristics of GaSe（Cu）/InSe heterojunctions are compared with those of GaSe（Un）/InSe heterojunctions fabricated by undoped p-GaSe and n-InSe. The series resistance of GaSe（Cu）/InSe heterojunctions is found, the value of which is about 10^3 times lower than the corresponding value of GaSe（Un）/InSe heterojunctions. A short-circuit current density of 9.0 mA/cm^2 and an open-circuit voltage of 0.42 V on GaSe（Cu）/InSe heterojunctions are obtained under illumination of 120 mW/cm^2 of a halogen lamp. The short-circuit current of GaSe（Cu）/InSe heterojunctions is about one order of magnitude lager than that of GaSe（Un）/InSe heterojunctions. These experimental results indicate that the low-resistivity of Cu-doped GaSe is effective for the electrical and photovoltaicproperties of GaSe/InSe heterojunctions.","subitem_description_type":"Abstract"}]},"item_10001_description_6":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The following article appeared in Journal of Applied Physics. 8/1/2000, Vol. 88 Issue 3, p1520 and may be found at http://dx.doi.org/10.1063/1.373849","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"重冨, 茂"},{"creatorName":"シゲトミ, シゲル","creatorNameLang":"ja-Kana"},{"creatorName":"Shigetomi, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"ikr_5255.pdf","filesize":[{"value":"331.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/4407/files/ikr_5255.pdf"},"version_id":"80692636-2026-4530-b3f3-220a2a196192"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Heterojunctions, Electrical properties, Electric currents, Illumination, Solar energy","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"5","path":["73","27"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"4407","relation_version_is_last":true,"title":["Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-02T13:31:47.081018+00:00"}