We carried out the Hall measurements of n- and p-Si wafer under the concentrated sunlight irradiation to discuss the effect of large amount of carrier generation. The Hall mobility decreased linearly with increasing the sunlight concentration, and this decrease in mobility was caused by an increase of simultaneously-formed carriers (electron and hole). In this analysis, two additional points was found; one was that carrier type inversion was occurred only in p-Si sample even at low sunlight concentration, and the other was an amount of generated electron was 10 times larger than that of hole. This was explained by the numerical analysis by considering the difference in mobility of electron and hole when a large amount of carrier generated. To investigate the difference in the amount of generated electron and hole, we carried out the lifetime measurement of n- and p-Si wafer. We found that n-Si has extremely longer lifetime than that of p-Si. These experimental results will explain the fact that an amount of generated electron was 10 times larger than that of hole.
雑誌名
宮崎大學工學部紀要
巻
47
ページ
73 - 76
発行年
2018-07
出版者
宮崎大学工学部
Miyazaki University
Faculty of Engineering, University of Miyazaki
リポジトリのご案内
n-およびp-Si 基板のライフタイムと光照射時のキャリアタイプの反転による太陽電池特性への影響
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