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PLおよびPR測定を用いたInAs/GaSb超格子構造の遷移エネルギー評価
http://hdl.handle.net/10458/00010457
http://hdl.handle.net/10458/000104576604abcf-0b25-4a03-b8a6-fc7f8d4e2777
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.3 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2022-12-07 | |||||
| タイトル | ||||||
| タイトル | PLおよびPR測定を用いたInAs/GaSb超格子構造の遷移エネルギー評価 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Transition energy evaluation of InAs/GaSb superlattice using Photoluminescence and Photoreflectance measurements | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Superlattice | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | InAs/GaSb | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Photoluminescence | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Photoreflectance | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
迫田, 理久
× 迫田, 理久× 矢田部, 龍彦× 荒井, 昌和× 碇, 哲雄× 福山, 敦彦× Sakoda, Riku× Yatabe, Tatsuhiko |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The transition energy of InAs/GaSb superlattice was evaluated by using Photoluminescence (PL) and Photoreflectance (PR) measurements. At the low-temperature PL measurements, an energy of distinctive peak shifted to the high energy side as the excitation light intensity increased. This is because the lowest level was filled with photoexcited carriers and the emission from the higher levels became dominant. At the low-temperature PR measurements, several peaks were observed. It was found that the PL peak located at slightly higher energy side than PR dominant peak. We also performed the theoretical calculation of band structure and transition energies in the InAs/GaSb superlattice using nextnano software. From the comparison with calculated transition energies and experimental results, a dominant PR peak was the transition between quantum levels of electron and heavy hole. It was considered that although the weak excitation at 4,2 K, the emission from the higher levels became dominant. This was because the PL peak located at higher energy side than PR peak. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 51, p. 63-67, 発行日 2022-11-30 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.miyazaki-u.ac.jp/tech/research/memoirs/ | |||||
| 関連名称 | 宮崎大学工学部 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
